Shifting intrinsic bistability states in a ferroelectric resonant tunneling diode

M. K. Li; N. M. Kim; S. J. Lee; J. W. Kim; T. W. Kang

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Shifting intrinsic bistability states in a ferroelectric resonant tunneling diode

机译：铁电共振隧穿二极管中固有双稳态的移动

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摘要

The intrinsic bistability state in a resonant tunneling diode (RTD) with a ferroelectric quantum well is investigated by using the nonequilibrium Green's function. The results show that the bistability states can be shifted with switching the polarization direction of ferroelectric quantum well. The electronic properties of the RTD are very sensitive to the ferroelectric polarization. A very small polarization 0.01 μC/cm~2 can produce a predominant peak shift.

机译：利用非平衡格林函数研究了具有铁电量子阱的共振隧穿二极管（RTD）的固有双稳态。结果表明，通过改变铁电量子阱的极化方向可以改变双稳态。 RTD的电子特性对铁电极化非常敏感。 0.01μC/ cm〜2的极小极化会产生明显的峰移。

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《Physical review. B, Condensed Matter And Materials Physics》 |2007年第21期|p.212106.1-212106.4|共4页
作者
M. K. Li; N. M. Kim; S. J. Lee; J. W. Kim; T. W. Kang;
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作者单位

Quantum-functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Joong-gu, Seoul 100-715, Korea;

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原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
ballistic transport; switching phenomena; tunneling;

机译：弹道运输;切换现象;隧道;

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专利

1. Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes [J] . Swaroop Ganguly, A. H. MacDonald, L. F. Register, Physical review. B, Condensed Matter And Materials Physics . 2006,第3期

机译：铁磁半导体谐振隧穿二极管的固有居里温度双稳态
2. Suppression of intrinsic bistability in resonant-tunneling diode by in-plane magnetic field [J] . A. Yu. Serov, G G. Zegrya Applied Physics Letters . 2005,第3期

机译：平面内磁场抑制谐振隧道二极管的固有双稳态
3. The role of emitter quasi-bound state and scattering on intrinsic bistability in resonant tunneling diodes [J] . Sandu T, Kirk WP Physica, E. Low-dimensional systems & nanostructures . 2004,第4期

机译：发射极准绑定状态和散射对共振隧穿二极管内在双稳性的作用
4. Wigner function simulation of intrinsic oscillations hysteresis and bistability in resonant tunneling structures [C] . Bryan A. Biegel, NASA Ames Research Ctr., Moffett Field, Conference on ultrafast phenomena in semiconductors . 1998

机译：共振隧穿结构固有振动滞后和双稳的Wigner函数模拟
5. Intrinsic bistability, self-consistency, and transport properties in novel resonant tunneling structures. [D] . Waung, Raymund Tsun-Tung. 1997

机译：新型共振隧穿结构的固有双稳性，自洽性和传输特性。
6. Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes [O] . Matteo Ghittorelli, Thomas Lenz, Hamed Sharifi Dehsari, -1

机译：有机铁电存储二极管中的量子隧穿和电荷积累
7. Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes [O] . Ganguly, Swaroop, MacDonald, A. H., Register, L. F., 2005

机译：铁磁半导体的固有居里温度双稳态共振隧穿二极管
8. Observation of Intrinsic Bistability in Resonant Tunneling Diode Modeling. [R] . Mains, R. K., Sun, J. P., Haddad, G. I. 1989

机译：共振隧穿二极管建模中的本征双稳态观测。

Shifting intrinsic bistability states in a ferroelectric resonant tunneling diode

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