Donor and acceptor energies for muonium in GaAs

R. L. Lichti; H. N. Bani-Salameh; B. R. Carroll; K. H. Chow; B. Hitti; S. R. Kreitzman

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Donor and acceptor energies for muonium in GaAs

机译：GaAs中mu的供体和受体能

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Analysis of existing data on muonium in GaAs provides an extensive set of ionization energies and barriers for motion and site transitions. Within an accepted model of muonium behavior in Ⅲ-Ⅴ compounds, these results establish the energy relationships among observed muonium centers in GaAs, including the metastable states. This analysis places the (0/+) donor level at 0.17 eV below the conduction band edge and the (-/0) acceptor level at roughly 0.60 eV above the top of the valence band for this very light hydrogen isotope, thus locating the muonium equivalent of the H(+/-) pinning level about 0.21 eV above midgap in GaAs, nearly 0.5 eV higher than predicted.

机译：对砷化镓中mu的现有数据的分析为运动和位点转换提供了广泛的电离能和势垒。在公认的Ⅲ-Ⅴ类化合物的behavior行为模型中，这些结果建立了在GaAs中观察到的mu中心（包括亚稳态）之间的能量关系。对于这种非常轻的氢同位素，此分析将（0 / +）供体能级置于导带边缘以下0.17 eV处，将（-/ 0）受主能级置于价带顶部上方的约0.60 eV处，从而确定了on相当于H（+/-）钉扎能级比GaAs中能隙高约0.21 eV，比预期高近0.5 eV。

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来源
《Physical review》 |2007年第4期|045221.1-045221.5|共5页
作者
R. L. Lichti; H. N. Bani-Salameh; B. R. Carroll; K. H. Chow; B. Hitti; S. R. Kreitzman;
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Department of Physics, Texas Tech University, Lubbock, Texas 79409-1051, USA;

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正文语种 eng
中图分类固体物理学;
关键词
Ⅲ-Ⅴ semiconductors; diffusion of impurities; muon spin rotation and relaxation;

机译：Ⅲ-Ⅴ族半导体;杂质扩散;介子旋转和松弛;

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机译：Gaas / sub 1-X / al / sub X / as超晶格中浅层供体和受体的能谱

Donor and acceptor energies for muonium in GaAs

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