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首页> 外文期刊>Solid-State Electronics >The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors
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The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors

机译：施主和受主调制掺杂中AlGaAs / InGaAs / GaAs异质结构中杂质分布对二维电子气迁移率的影响

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摘要

The low-temperature mobility of two-dimensional electron gas (2DEG) limited scattering by ionized impurities, alloy disorder, acoustic and optical phonons, and interface roughness was calculated for novel pseudonlorphic modulation-doped by donors and acceptors InGaAsiAlGaAs quantum well structures promising for high power microwave transistors. Due to the high 2DEG density in the quantum well intersubband transitions were taken into account. Scattering by the ionized donors from delta-layer located in AIGaAs barriers dominates, whereas scattering by the ionized acceptors occupying the most part of AIGaAs barriers is negligibly weak. The width of donor doping profile is a key parameter to control 2DEG mobility, thus, increasing of the profile width from 0.25 nm to 4 nm due to segregation and diffusion of donor atoms halves the mobility. We have proposed a few approaches for the weakening of Coulomb scattering and the increase in 2DEG mobility in the novel heterostructures. The predicted mobility enhancement due to delta-layer splitting into two delta-sublayers was verified experimentally. (C) 2016 Elsevier Ltd. All rights reserved.
机译：计算了供体和受主InGaAsiAlGaAs量子阱结构掺杂的新型拟氮调制对二维电子气（2DEG）的低温迁移率的限制，所述二维迁移率受离子化杂质，合金无序，声和光学声子以及界面粗糙度的限制。功率微波晶体管。由于量子阱中较高的2DEG密度，因此考虑了子带间跃迁。电离施主从位于AIGaAs势垒的δ层的散射占主导地位，而电离受体占据AIGaAs绝大部分的散射则微弱。施主掺杂分布的宽度是控制2DEG迁移率的关键参数，因此，由于施主原子的分离和扩散，分布宽度从0.25 nm增加到4 nm，迁移率降低了一半。我们已经提出了几种减弱库仑散射和增加新型异质结构中2DEG迁移率的方法。实验验证了由于将δ层分为两个δ子层而导致的预计迁移率提高。 （C）2016 Elsevier Ltd.保留所有权利。

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  • 来源
    《Solid-State Electronics》 |2017年第3期|66-72|共7页
  • 作者

    Protasov D. Yu.; Zhuravlev K. S.;

  • 作者单位

    Russian Acad Sci, AV Rzhanov Inst Semicond Phys, Siberian Branch, 13 Lavrentiev Ave, Novosibirsk 630090, Russia|Novosibirsk State Tech Univ, 20 K Marx Ave, Novosibirsk 630073, Russia;

    Novosibirsk State Univ, 2 Pirogov St, Novosibirsk 630090, Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    pHEMT; Scattering mechanisms; Ionized donors and acceptors; delta-layers broadening;

    机译：pHEMT;散射机制;电离的供体和受体;δ层展宽;

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