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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Nitrogen-related effects on low-temperature electronic properties of two-dimensional electron gas in very dilute nitride GaN_xAs _(1-x)/AlGaAs (x = 0 and 0.08%) modulation-doped heterostructures
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Nitrogen-related effects on low-temperature electronic properties of two-dimensional electron gas in very dilute nitride GaN_xAs _(1-x)/AlGaAs (x = 0 and 0.08%) modulation-doped heterostructures

机译：氮对极稀氮化物GaN_xAs _（1-x）/ AlGaAs（x = 0和0.08％）调制掺杂异质结构中二维电子气的低温电子性能的影响

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摘要

The low-temperature (4 K) two-dimensional (2D) electron gas mobility data versus carrier concentration in the modulation-doped dilute nitride GaAs _(1-x)N_x/Al_(0.3)Ga_(0.7)As (x = 0 and 0.08%) heterostructures are analyzed. Theoretical analysis is based on Fermi-Dirac statistics for the occupation of the quantum confined electronic states in the triangular quantum wells and the width of the quantum well versus 2D concentration. In addition, the mobility analysis is based on Matthiessen's rule for various scattering mechanisms. We found that the N-related neutral cluster alloy scattering together with crystal dislocations created at the interface strongly affects the electrons' mobility in the N-contained channel sample. We also found that as the electron concentration in the well increases from ～1 × 10~(11) to 3.5 × 10~(11) cm~(-2) the carriers mainly occupy the first subband, tending to remain closer and closer to the hetero-interface.
机译：调制掺杂的稀氮化物GaAs _（1-x）N_x / Al_（0.3）Ga_（0.7）As（x = 0）中的低温（4 K）二维（2D）电子气迁移率数据与载流子浓度的关系和0.08％）的异质结构进行了分析。理论分析基于费米-狄拉克（Fermi-Dirac）统计数据，用于研究三角量子阱中的量子受限电子态以及量子阱的宽度与2D浓度的关系。另外，迁移率分析是基于Matthiessen规则的各种散射机制。我们发现，与N相关的中性团簇合金的散射以及在界面处产生的晶体位错会强烈影响N通道样品中的电子迁移率。我们还发现，随着阱中电子浓度从〜1×10〜（11）增加到3.5×10〜（11）cm〜（-2），载流子主要占据第一子带，并趋于与第一子带越来越近。异类接口。

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