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首页> 外文期刊>Trends in Ecology & Evolution >Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility
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Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

机译：N型调制掺杂Algaas / Gaasbi量子井结构的电子传输：Bi和热退火对电子有效质量和电子迁移的影响

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摘要

We investigate electronic transport properties of as-grown and annealed n-type modulation-doped Al0.15Ga0.85As/GaAs1-xBix (x = 0 and 0.04) quantum well (QW) structures using magnetotransport measurements in the temperature range 4.2 K and 60 K and at magnetic fields up to 18 T. Thermal annealing process was applied at two different temperatures, 700 degrees C and 350 degrees C during 60 s and 180 s, respectively. We find that electron effective mass and 2D electron density in as-grown Bi-containing sample are slightly lower than that in Bi-free one. Furthermore, quantum electron mobility and quantum scattering time are observed to be decreased in Bi-containing samples. The annealing process at 700 degrees C causes a slight increase in electron effective mass and 2D electron density. A negligible decrease in electron effective mass and an increase in 2D electron density are determined following annealing at 350 degrees C. The observed change in electron effective mass following thermal annealing process is attributed to changing 2D electron density in the samples. No improvement on quantum electron mobility and quantum scattering time are observed following thermal annealing at both process temperatures. We determine that one electron subband (e1) for as-grown and annealed (at 700 degrees C for 60 s) Bi-containing QWs and two electron subbands (e1 and e2) for the annealed (at 350 degrees C for 180 s) GaAsBi QW sample and the Bi-free QW sample contribute to electronic transport. Our results reveal that there is no significant direct effect of Bi on effective electron mass, but an indirect effect, in which Bi can provoke changes in 2D electron density and hence causes not to observe actual band-edge electron mass but a deviation from its band-edge value. Therefore, it can be concluded that dispersion curve of conduction band does not change as an effect of Bi incorporation in GaAs.
机译：我们研究了使用MagnetOcransport测量在4.2 k和60中使用磁传输测量的生长和退火的N型调制掺杂Al0.15Ga0.85as / GaAs1-xbix（x = 0和0.04）量子阱（qw）结构的电子传输性能k和磁场高达18t的磁场。在60 s和180s的两个不同温度下，在两个不同的温度下，700℃和350摄氏度施加热退火过程。我们发现以生长的Bi-Faile样品中的电子有效质量和2D电子密度略低于无自由的样品。此外，观察到在含双样品中降低量子电子迁移率和量子散射时间。 700摄氏度的退火过程导致电子有效质量和2D电子密度的略微增加。在350℃的退火后确定电子有效质量和2D电子密度的增加的可忽略不计。在热退火过程中观察到的电子有效质量的变化归因于在样品中改变2D电子密度。在两个过程温度下，在热退火之后观察到量子电子迁移率和量子散射时间的改善。我们确定用于生长和退火的一个电子副带（E1）（以700摄氏度为700℃）的含有退火的Bi QW和两个电子副带（E1和E2）（在350摄氏度为180秒）Gaasbi QW样本和双自由QW样品有助于电子运输。我们的研究结果表明，BI对有效电子质量没有显着直接的直接影响，但是伯爵可以引发2D电子密度的变化，因此不会观察到实际带边的电子质量，而是从其带偏差。 -Edge值。因此，可以得出结论，传导频带的分散曲线不会随着BI掺入在GaAs中的效果而变化。

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