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Intrinsic surface band bending in Cu_3N(100) ultrathin films

机译:Cu_3N(100)超薄膜的本征表面能带弯曲

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摘要

Highly homogeneous, ultrathin films of copper nitride (Cu_3N) have been grown on Fe(001) at room temperature using a Cu evaporator and a radio-frequency plasma source to obtain atomic nitrogen in a UHV environment. Cu_3N is a semiconductor with the valence band edge at -0.65 ±0.05 eV below the Fermi Level. The formation of copper nitride can be detected spectroscopically by the shape of the Cu LVV-Auger electron transition, which changes sensibly in shape and position compared to metallic Cu. Cu_3N grows epitaxially with the substrate forming flat disklike mosaic blocks, (001) oriented. Both x-ray core level photoelectron spectros-copy and ultraviolet photoelectron spectroscopy photoemission experiments have been used to study the electronic structure. A first-principles calculation has been performed and compared with the measured spectra.
机译:室温下,使用Cu蒸发器和射频等离子体源在Fe(001)上生长了高度均匀的氮化铜(Cu_3N)超薄膜,以在超高压环境中获得原子氮。 Cu_3N是价带边缘在费米能级以下-0.65±0.05 eV的半导体。氮化铜的形成可以通过Cu LVV-Auger电子跃迁的形状进行光谱检测,与金属Cu相比,其形状和位置发生明显变化。 Cu_3N外延生长,基材形成平盘状镶嵌块,取向为(001)。 X射线核能级光电子能谱和紫外光电子能谱光发射实验均已用于研究电子结构。进行了第一性原理计算并将其与测得的光谱进行比较。

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