Shock-induced band-gap shift in GaN: Anisotropy of the deformation potentials

H. Y. Peng; M. D. McCluskey; Y. M. Gupta; M. Kneissl; N. M. Johnson

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Shock-induced band-gap shift in GaN: Anisotropy of the deformation potentials

机译：GaN中的冲击引起的带隙位移：形变势的各向异性

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The band-gap shift of GaN has been examined as a function of uniaxial compression along the c axis using time-resolved, optical absorption measurements in shock wave experiments. The hydrostatic deformation potential a_(cz) - D_1 (parallel to the c axis), has been determined independently from a_(ct) - D_2 (perpendicular to the c axis). Based on the experimental results, a set of deformation potentials has been obtained: a_(cz) - D_1 = -9.6 eV, a_(ct) - D_2 = -8.2 eV, D_3 = 1.9 eV, and D_4 = -1.0 eV. These values indicate that the deformation potentials in wurtzite GaN are anisotropic.

机译：在冲击波实验中，使用时间分辨的光学吸收测量，已经研究了GaN的带隙位移与沿c轴的单轴压缩的关系。已经独立于a_（ct）-D_2（垂直于c轴）确定了静水变形势a_（cz）-D_1（平行于c轴）。根据实验结果，获得了一组变形势：a_（cz）-D_1 = -9.6 eV，a_（ct）-D_2 = -8.2 eV，D_3 = 1.9 eV，D_4 = -1.0 eV。这些值表明纤锌矿型GaN中的变形势是各向异性的。

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《Physical review. B, Condensed Matter And Materals Physics》 |2005年第11期|p.115207.1-115207.5|共5页
作者
H. Y. Peng; M. D. McCluskey; Y. M. Gupta; M. Kneissl; N. M. Johnson;
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作者单位

Institute for Shock Physics and Department of Physics, Washington State University, Pullman, Washington 99164-2816, USA;

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正文语种 eng
中图分类固体物理学;
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Ⅲ-Ⅴ semiconductors; strain-induced splitting; high-pressure and shock wave effects in solids and liquids; absorption and reflection spectra: visible and ultraviolet;

机译：Ⅲ-Ⅴ族半导体;应变诱导分裂;固体和液体中的高压和冲击波效应;吸收和反射光谱：可见和紫外;

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Shock-induced band-gap shift in GaN: Anisotropy of the deformation potentials

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