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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Magnetotransport in high-g-factor low-density two-dimensional electron systems confined in In_(0.75)Ga_(0.25)As/In_(0.75)Al_(0.25)As quantum wells
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Magnetotransport in high-g-factor low-density two-dimensional electron systems confined in In_(0.75)Ga_(0.25)As/In_(0.75)Al_(0.25)As quantum wells

机译:限制在In_(0.75)Ga_(0.25)As / In_(0.75)Al_(0.25)As量子阱中的高g因子低密度二维电子系统中的磁传输

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摘要

We report magnetotransport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_(0.75)Ga_(0.25)As/In_(0.75)Al_(0.25)As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures and electron densities, the latter controlled by a gate voltage down to values of 1 X 10~(11) cm~(-2). A tilted-field configuration is used to induce Landau level crossings and magnetic transitions between quantum Hall states with different spin polarizations. A large filling factor dependent effective electronic g-factor is determined by the coincidence method and cyclotron resonance measurements. From these measurements the change in exchange-correlation energy at the magnetic transition is deduced. These results demonstrate the impact of many-body effects in tilted-field magnetotransport of high-mobility 2DESs confined in In_(0.75)Ga_(0.25)As/In_(0.75)Al_(0.25)As quantum wells. The large tunability of electron density and effective g-factor, in addition, make this material system a promising candidate for the observation of a large variety of spin-related phenomena.
机译:我们报告限制在In_(0.75)Ga_(0.25)As / In_(0.75)Al_(0.25)As单量子阱中的高迁移率二维电子系统(2DES)的磁传输测量。在很宽的温度和电子密度范围内观察到几种量子霍尔态,后者由栅极电压控制到1 X 10〜(11)cm〜(-2)。倾斜场配置用于诱发具有不同自旋极化的量子霍尔态之间的兰道能级交叉和磁跃迁。通过重合方法和回旋加速器共振测量来确定依赖于大填充因子的有效电子g因子。根据这些测量,可以得出在磁跃迁处的交换相关能量的变化。这些结果证明了多体效应对局限在In_(0.75)Ga_(0.25)As / In_(0.75)Al_(0.25)As量子阱中的高迁移率2DES的倾斜磁场磁传输的影响。此外,电子密度的大可调性和有效的g因子使该材料系统成为观察各种自旋相关现象的有前途的候选者。

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