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首页> 外文期刊>Physical review >Thickness-driven first-order phase transitions in manganite ultrathin films
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Thickness-driven first-order phase transitions in manganite ultrathin films

机译：厚度驱动的锰超薄膜的一阶相变

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摘要

We report thickness dependent inhomogeneous antiferromagnetic (AFM) to ferromagnetic (FM) phase transitions in ultrathin La0.7Sr0.3MnO3 (LSMO) films grown on the SrTiO3 substrate. When the films are 4-7 unit cells (UCs) thick, FM domains appear as isolated nanodisks in the AFM matrix that together floats on top of the three AFM base UCs, leading a superparamagnetic blocking behavior. Our first principles calculations unravel the rather counterintuitive physical origin of this mixed phase state; the formation of FM/AFM domain boundaries is energetically favorable. At 8 UCs, an abrupt shear strain relief occurs in the LSMO thin film and twinning patterns with two unit cell periodicity form along the [010] and [100] directions. Our studies reveal the complexity of the magnetic phase transition at the nanometer scale and open a door for the development of quantum devices and statistical theories.
机译：我们报告了生长在SrTiO3衬底上的超薄La0.7Sr0.3MnO3（LSMO）膜中依赖于厚度的不均匀反铁磁（AFM）到铁磁（FM）相变。当膜的厚度为4-7个单位细胞（UCs）时，FM域作为孤立的纳米磁盘出现在AFM矩阵中，它们一起漂浮在三个AFM基本UC的顶部，从而导致超顺磁阻挡行为。我们的第一个原理计算揭示了这种混合相态的相当违反直觉的物理起源。 FM / AFM域边界的形成在能量上是有利的。在8个UC处，LSMO薄膜突然发生剪切应变消除，并且沿[010]和[100]方向形成具有两个单位晶格周期性的孪生图案。我们的研究揭示了纳米级磁性相变的复杂性，为量子器件和统计理论的发展打开了一扇门。

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  • 来源
    《Physical review》 |2019年第21期|214419.1-214419.13|共13页
  • 作者

    Chen Hongyan; Yu Yang; Wang Zhe; Bai Yu; Lin Hanxuan; Li Xiaolong; Liu Hao; Miao Tian; Kou Yunfang; Zhang Yongsheng; Li Yan; Tang Jin; Wang Zechao; Cai Peng; Zhu Yinyan; Cheng Zhaohua; Zhong Xiaoyan; Wang Wenbin; Gao Xingyu; Yin Lifeng; Wu Ruqian; Shen Jian;

  • 作者单位

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;

    Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

    Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

    Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

    Tsinghua Univ, Natl Ctr Electron Microscopy Beijing, Sch Mat Sci & Engn, Key Lab Adv Mat MOE,State Key Lab New Ceram & Fin, Beijing 100084, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China|Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;

    Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

    Tsinghua Univ, Natl Ctr Electron Microscopy Beijing, Sch Mat Sci & Engn, Key Lab Adv Mat MOE,State Key Lab New Ceram & Fin, Beijing 100084, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China|Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China|Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China|Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China;

    Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China|Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China|Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

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