Gate-defined quantum point contact in an InAs two-dimensional electron gas

Mittag Christopher; Karalic Matij A.; Lei Zijin; Thomas Candice; Tuaz Aymeric; Hatke Anthony T.; Gardner Geoffrey C.; Manfra Michael J.; Ihn Thomas; Ensslin Klaus

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Gate-defined quantum point contact in an InAs two-dimensional electron gas

机译：InAs二维电子气中栅极定义的量子点接触

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We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus in integer multiples of e(2)/h. Upon the application of a perpendicular magnetic field, spin-resolved magnetoelectric subbands are visible. Through finite bias spectroscopy we measure the subband spacings in both parallel and perpendicular direction of the magnetic field and determine the g factor.

机译：我们实验研究在高迁移率InAs二维电子气中静电定义的收缩中的量化电导。平行磁场提升了自旋简并性，并允许以e（2）/ h的整数倍观察高原。在施加垂直磁场时，可以看到自旋分辨的磁电子带。通过有限偏置光谱，我们在磁场的平行和垂直方向上测量子带间距，并确定g因子。

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《Physical review》 |2019年第7期|075422.1-075422.6|共6页
作者
Mittag Christopher; Karalic Matij A.; Lei Zijin; Thomas Candice; Tuaz Aymeric; Hatke Anthony T.; Gardner Geoffrey C.; Manfra Michael J.; Ihn Thomas; Ensslin Klaus;
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Swiss Fed Inst Technol Solid State Phys Lab Dept Phys CH-8093 Zurich Switzerland;

Purdue Univ Microsoft Stn Q Purdue W Lafayette IN 47907 USA|Purdue Univ Dept Phys & Astron W Lafayette IN 47907 USA|Purdue Univ Birck Nanotechnol Ctr W Lafayette IN 47907 USA;

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1. Gate-defined quantum point contact in an InAs two-dimensional electron gas [J] . Mittag Christopher, Karalic Matij A., Lei Zijin, Physical review, B . 2019,第7期

机译：在INAS二维电子气体中接触栅极定义量子点接触
2. Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two-Dimensional Electron Gas (vol 53, pg 484, 2019) [J] . Khmissi H., El Sayed A. M. Semiconductors . 2019,第10期

机译：Quantum受限于INAS / GaAs二维电子气体耦合的INAS量子点的光致发光的温度依赖性（Vol 53，PG 484,2019）
3. Spin-orbit interaction in a two-dimensional electron gas in a InAs/AlSb quantum well with gate-controlled electron density [J] . Heida JP., Kuipers JJ., Klapwijk TM., Physical Review, B. Condensed Matter . 1998,第19期

机译：具有门控电子密度的InAs / AlSb量子阱中二维电子气中的自旋轨道相互作用
4. Very shallow two-dimensional electron gas realized by In/sub x/Al/sub 1-x/As/InAs single quantum well grown on GaAs111A substrate [C] . Gozu, S., Watanabe, . 2002

机译：通过在GaAs 111 A衬底上生长的In / sub x / Al / sub 1-x / As / InAs单量子阱实现的非常浅的二维电子气
5. In Pursuit of Quantum Hardware: Investigations of Gate-Defined Quantum Dots in Si/SiGe Heterostructures [D] . Neyens, Samuel F. 2020

机译：追求量子硬件：Si / SiGe异质结构中的栅极定义量子点的研究
6. Angular momentum transfer from photon polarization to an electron spin in a gate-defined quantum dot [O] . Takafumi Fujita, Kazuhiro Morimoto, Haruki Kiyama, -1

机译：角动量从光子极化转移到门定义量子点中的电子自旋
7. Gate-defined quantum point contact in an InAs two-dimensional electron gas [O] . Christopher Mittag, Matija Karalic, Zijin Lei, 2019

机译：在INAS二维电子气体中接触栅极定义量子点接触

Gate-defined quantum point contact in an InAs two-dimensional electron gas

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