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Split-off states in tunnel-coupled semiconductor heterostructures for ultrafast modulation of spin and optical polarization

机译:隧道耦合半导体异质结构中的分裂态,用于自旋和光偏振的超快调制

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摘要

We present a theoretical analysis of the split-off states emerging due to a tunnel coupling between a remote bound state and a semiconductor quantum well (QW). The on-site Coulomb repulsion and the spin splitting of the bound state have been considered. The split-off states emerge in the band gap of the QW and reveal themselves as two solitary peaks in the photoluminescence (PL) from the QW. The peaks have opposite circular polarization and their spectral position strongly depends on the tunnel coupling strength. We suggest a mechanism of ultrafast PL polarization switching by means of electrical modulation of the tunnel coupling by an external gate. The obtained results open a new possibility for the spin and optical polarization control in nanoscale systems.
机译:我们提出了由于远程束缚态与半导体量子阱(QW)之间的隧道耦合而出现的分裂态的理论分析。已经考虑了现场库仑排斥和结合态的自旋分裂。分离状态出现在QW的带隙中,并显示为来自QW的光致发光(PL)中的两个孤立峰。这些峰具有相反的圆极化,其光谱位置在很大程度上取决于隧道耦合强度。我们提出了一种通过外部门对隧道耦合进行电调制来实现超快PL偏振切换的机制。获得的结果为纳米级系统中的自旋和光偏振控制开辟了新的可能性。

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  • 来源
    《Physical review》 |2020年第4期|045305.1-045305.6|共6页
  • 作者单位

    Ioffe Institute St. Petersburg 194021 Russia LUT University FI-53851 Lappeenrania Finland;

    Physics Department Quantum Technology Center Lomonosov Moscow State University 119991 Moscow Russia;

    P.N. Lebedev Physical Institute 119991 Moscow Russia;

    LUT University FI-53851 Lappeenrania Finland;

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