Optimization of power broadening in optically detected magnetic resonance of defect spins in silicon carbide

Jun-Feng Wang; Jin-Ming Cui; Fei-Fei Yan; Qiang Li; Ze-Di Cheng; Zheng-Hao Liu; Zhi-Hai Lin; Jin-Shi Xu; Chuan-Feng Li; Guang-Can Guo

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Optimization of power broadening in optically detected magnetic resonance of defect spins in silicon carbide

机译：光学检测碳化硅中缺陷自旋的磁共振中功率展宽的优化

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Defect spins in silicon carbide have become promising platforms with respect to quantum information processing and quantum sensing. Indeed, the optically detected magnetic resonance (ODMR) of defect spins is the cornerstone of the applications. In this work, we systematically investigate the contrast and linewidth of laser and microwave power-dependent ODMR with respect to ensemble-divacancy spins in silicon carbide at room temperature. The results suggest that magnetic field sensing sensitivity can be greatly improved for the optimized laser and microwave power range. The experiment will be useful for the applications of silicon carbide defects in quantum information processing and ODMR-dependent quantum sensing.

机译：碳化硅中的缺陷自旋已成为有关量子信息处理和量子感测的有前途的平台。实际上，缺陷自旋的光学检测磁共振（ODMR）是应用的基石。在这项工作中，我们系统地研究了室温下激光和微波功率相关的ODMR相对于碳化硅中系综自旋的对比度和线宽。结果表明，在优化的激光和微波功率范围内，磁场感应灵敏度可以大大提高。该实验将对碳化硅缺陷在量子信息处理和依赖ODMR的量子感测中的应用非常有用。

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来源
《Physical review》 |2020年第6期|064102.1-064102.6|共6页
作者
Jun-Feng Wang; Jin-Ming Cui; Fei-Fei Yan; Qiang Li; Ze-Di Cheng; Zheng-Hao Liu; Zhi-Hai Lin; Jin-Shi Xu; Chuan-Feng Li; Guang-Can Guo;
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CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei Anhui 230026 People's Republic of China and CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Hefei Anhui 230026 People's Republic of China;

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1. Optimization of power broadening in optically detected magnetic resonance of defect spins in silicon carbide [J] . Physical review, B . 2020,第6期

机译：碳化硅缺陷旋转的光学检测磁共振中功率扩大的优化
2. Avoiding power broadening in optically detected magnetic resonance of single NV defects for enhanced dc magnetic field sensitivity [J] . A. Dreau, M. Lesik, L. Rondin, Physical review . 2011,第19期

机译：避免在光学检测的单个NV缺陷的磁共振中扩大功率，以增强DC磁场灵敏度
3. Identification of trapping defects in 4H-silicon carbide metal-insulator-semiconductor field-effect transistors by electrically detected magnetic resonance [J] . Morgen S. Dautrich, Patrick M. Lenahan, Aivars J. Lelis Applied Physics Letters . 2006,第22期

机译：通过电检测磁共振识别4H碳化硅金属绝缘体半导体场效应晶体管中的俘获缺陷
4. Spin-dependent recombination of defects in bulk ZnO crystals and ZnO nanocrystals as studied by optically detected magnetic resonance [C] . N.G. Romanov, D.O. Tolmachev, A.G. Badalyan, Physica B: Condensed matter . 2009

机译：光学检测的磁共振研究了块状ZnO晶体和ZnO纳米晶体中缺陷的自旋依赖性复合
5. Study of spin-dependent transitions and spin coherence at the (111) oriented phosphorous doped crystalline silicon to silicon dioxide interface using pulsed electrically detected magnetic resonance. [D] . Paik, Seoyoung. 2011

机译：使用脉冲电检测磁共振研究（111）取向的磷掺杂晶体硅与二氧化硅界面处的自旋相关跃迁和自旋相干性。
6. All-optical coherent population trapping with defect spin ensembles in silicon carbide [O] . Olger V. Zwier, Danny O’Shea, Alexander R. Onur, -1

机译：碳化硅中具有缺陷自旋集合的全光相干人口陷阱
7. Avoiding power broadening in optically detected magnetic resonance of single NV defects for enhanced DC-magnetic field sensitivity [O] . Dréau, A., Lesik, M., Rondin, L., 2012

机译：避免光学检测的磁共振中的功率变宽单个NV缺陷用于增强DC磁场灵敏度

Optimization of power broadening in optically detected magnetic resonance of defect spins in silicon carbide

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