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Dispersion and decay rate of exciton-polaritons and radiative modes in transition metal dichalcogenide monolayers

机译:激子 - 极性子和过渡金属二甲硅藻二甲硅烷单层辐射模式的分散和衰减率

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摘要

The two-dimensional excitons of transition metal dichalcogenide (TMDC) monolayers make these materials extremely promising for optical and optoelectronic applications. When the excitons interact with the electromagnetic field, they will give rise to exciton-polaritons. i.e.. modes that propagate in the material plane while being confined in the out-of-plane direction. In this work, we derive the characteristic equations that determine both radiative and polaritonic modes in TMDC monolayers and we analyze the dispersion and decay rate of the modes. The condition for the existence of exciton-polaritons can be described in terms of a strong-coupling regime for the interaction between the exeiton and the three-dimensional continuum of free-space electromagnetic modes. We show that the threshold for the strong-coupling regime critically depends on the interplay between nonradiative losses and the dielectric function imbalance at the two sides of the monolayer. Our results illustrate that a fine control of the dielectric function of the embedding media is essential for realizing exciton-polaritons in the strong-coupling regime.
机译:过渡金属二甲基化物(TMDC)单层的二维激子使这些材料非常有前途对于光学和光电应用。当激子与电磁场相互作用时,它们会引起激子 - 极性子。即,在材料平面中传播的模式,同时被限制在平面外方向上。在这项工作中,我们得出了在TMDC单层中确定辐射和偏光性模式的特征方程,我们分析了模式的分散和衰减率。可以根据exiteTon与自由空间电磁模式的三维连续性相互作用的强耦合方案来描述存在激子 - 极性官的存在条件。我们表明,强耦合制度的阈值批判性地取决于非抗体损失与单层两侧的介电函数不平衡之间的相互作用。我们的结果表明,对嵌入介质的介电函数的精细控制对于在强耦合状态下实现激子 - 极性官来说是必不可少的。

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  • 来源
    《Physical review》 |2018年第20期|205436.1-205436.11|共11页
  • 作者单位

    Kavli Institute of Nanoscience Department of Quantum Nanoscience Delft University of Technology Lorentzweg 1 2628 CJ Delft The Netherlands;

    Kavli Institute of Nanoscience Department of Quantum Nanoscience Delft University of Technology Lorentzweg 1 2628 CJ Delft The Netherlands;

    Kavli Institute of Nanoscience Department of Quantum Nanoscience Delft University of Technology Lorentzweg 1 2628 CJ Delft The Netherlands;

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