Structure determination of hydrogen-terminated 4H-SiC(0001) by LEED

Ando Hiroshi; Visikovskiy Anton; Nakagawa Takeshi; Mizuno Seigi; Tanaka Satoru

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Structure determination of hydrogen-terminated 4H-SiC(0001) by LEED

机译：用LEED结构测定氢封端的4H-SIC（0001）

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SiC(0001)-(1 x 1)-H consisting of monohydride is a preferred starting surface structure for synthesis of the two-dimensional materials on SiC(0001). Here we report preparation of the SiC(0001)-(1 x 1)-H by atomic hydrogen exposure and structure determination of the SiC(0001)-(1 x 1)-H by a quantitative LEED analysis. Our data show that the SiC(0001)-(1 x 1)-H is indeed a bulk terminated unreconstructed SiC(0001) surface. The sample morphology was also investigated using AFM. The dominance of one of two possible inequivalent surface terminations of 4H polytype of SiC crystal was confirmed.

机译：由单倍过单倍过的SiC（1×1）-H是用于在SiC（0001）上合成二维材料的优选起始表面结构。在这里，我们通过定量的LEED分析报告通过原子氢暴露和SiC（1×1）-H的原子氢暴露和结构测定来报告SiC（0001） - （1×1）-H的制备。我们的数据显示SiC（0001） - （1 x 1）-h确实是批量终止未折合的SiC（0001）表面。使用AFM还研究了样品形态。确认了SiC晶体4H多型可能不等性表面终端之一的优势。

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《Physical review》 |2019年第23期|235434.1-235434.6|共6页
作者
Ando Hiroshi; Visikovskiy Anton; Nakagawa Takeshi; Mizuno Seigi; Tanaka Satoru;
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Kyushu Univ Dept Appl Quantum Phys & Nucl Engn Fukuoka Fukuoka 8190395 Japan;

Kyushu Univ Dept Appl Quantum Phys & Nucl Engn Fukuoka Fukuoka 8190395 Japan;

Kyushu Univ Dept Mol & Mat Sci Kasuga Fukuoka 8168580 Japan;

Kyushu Univ Dept Mol & Mat Sci Kasuga Fukuoka 8168580 Japan;

Kyushu Univ Dept Appl Quantum Phys & Nucl Engn Fukuoka Fukuoka 8190395 Japan;

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1. Structure determination of hydrogen-terminated 4H-SiC(0001) by LEED [J] . Ando Hiroshi, Visikovskiy Anton, Nakagawa Takeshi, Physical review . 2019,第23期

机译：LEED法测定氢封端的4H-SiC（0001）的结构
2. Structure determination of hydrogen-terminated 4H-SiC(0001) by LEED [J] . Ando Hiroshi, Visikovskiy Anton, Nakagawa Takeshi, Physical review, B . 2019,第23期

机译：用LEED结构测定氢封端的4H-SIC（0001）
3. Reducing the V2O3(0001) surface through electron bombardment - a quantitative structure determination with I/V-LEED [J] . Feiten Felix E., Kuhlenbeck Helmut, Freund Hans-Joachim Physical chemistry chemical physics: PCCP . 2016,第4期

机译：通过电子轰击还原V2O3（0001）表面-使用I / V-LEED进行定量结构测定
4. STM/LEED, XPS による4H-SiC(0001)プロセス表面の原子構造解析 [C] . 石田剛志, 有馬健太, 遠藤勝義, 精密工学会学術講演会 . 2004

机译：STM / LEED，XPS的4H-SIC（0001）工艺表面的原子结构分析
5. LEED CRYSTALLOGRAPHIC STUDIES OF OXYGEN ADSORBED ON THE (0001) SURFACE OF ZIRCONIUM [D] . HUI, KA-CHUNG GLEN. 1986

机译：锆（0001）表面吸附氧的LEED晶体学研究
6. Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001) [O] . Hui Deng, Katsuyoshi Endo, Kazuya Yamamura -1

机译：表面改性和磨料抛光之间的竞争：控制4H-SiC表面原子结构的方法（0001）
7. Reducing the V₂O₃(0001) surface through electron bombardment – a quantitative structure determination with I/V-LEED [O] . Feiten, F., Kuhlenbeck, H., Freund, H. 2016

机译：通过电子轰击减少V _{2 O _{3 （0001）表面 - 使用I / V-LEED进行定量结构测定}}

Structure determination of hydrogen-terminated 4H-SiC(0001) by LEED

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