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首页> 外文期刊>Physical review >Unusual pressure-induced metallic state in the correlated narrow band-gap semiconductor FeSi
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Unusual pressure-induced metallic state in the correlated narrow band-gap semiconductor FeSi

机译：相关窄带间隙半导体Fesi中不寻常的压力诱导的金属状态

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Compressing FeSi induces a progressive semiconductor to metal transition, onset at P = 15 GPa at temperatures below T-max determined by the degree of disorder in the sample. At high pressure preceding charge-gap closure, a broad maximum manifests in the rho(T) data at T-max and is a feature which persists into the metallic state. The extremum in rho(T) occurs at T-max similar to 40 K at similar to 11 GPa and shifts monotonically to similar to 240 K as pressure is increased to similar to 32 GPa, in the most detailed example of three series of measurements involving pressurized FeSi with different degrees of disorder. The transition to a metallic phase is an electronic change only, in that the B 20-type crystal structure is retained up to 30 GPa, with no evidence of a discontinuity in the volume-pressure equation of state data. Samples from the same ingot subjected to different quasihydrostatic conditions reveal different values of the critical pressure of the electronic transition, its width, and pressure dependences of T-max. This attests to sensitivity of the electronic transition to the degree of disorder in the investigated sample. The metallic state has neither Fermi-liquid nor non-Fermi-liquid behavior. Such an unusual pressure-induced correlated metallic state in FeSi is attributed to extended states within the 3d-3p hybridization gap originating from disorder and compression tuning of the mobility edge relative to the Fermi level. The metallic state has also been investigated in external magnetic fields up to 8 T at low temperatures (2 K = T = 20 K) at 15 and 19 GPa. This reveals a positive magnetoresistance, as observed in doped Fe1-xCoxSi samples at ambient pressure, suggesting that in the majority and minority spin bands there is a field-induced modification of the respective magnitudes of charge-carrier populations which have different mobilities.
机译：压缩Fesi诱导渐进半导体到金属转变，在P> = 15GPa的低于T-Max的温度下，通过样品中的病症确定。在充电间隙闭合之前的高压下，T-Max的RHO（T）数据中的广泛最大值是持续存在于金属状态的特征。 rho（t）中的极值在类似于40k的T-max时发生，类似于11 gpa，并且单调以与240k相似的变化增加至类似于32 gpa，在涉及的三个系列测量的最详细例子中。用不同程度的疾病加压的Fesi。到金属相的过渡仅是电子变化，因为B 20型晶体结构保持高达30GPa，没有证据表明状态数据的体积压力方程中的不连续性。来自不同曲线的相同铸锭的样品揭示了T-Max的临界临界压力的不同值，其宽度和压力依赖性。这证明了电子过渡到研究样本中的疾病程度的敏感性。金属状态既不具有费米液也不是非FERMI-液体行为。这种异常的压力引起的Fesi的相关金属状态归因于源自迁移率边缘的紊乱和压缩调节的3D-3P杂交间隙内的延伸状态。在15至19GPa的低温下在低温（2k <= T <= 20 k）的外部磁场中也已经在外部磁场中研究了金属状态。这揭示了阳性磁阻，如在环境压力下的掺杂Fe1-Xcoxsi样品中观察到的，表明在大多数和少数族旋转条带中，存在具有不同迁移率的电荷载体群的各个势幅的视野诱导的修改。

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  • 来源
    《Physical review》 |2019年第15期|155118.1-155118.9|共9页
  • 作者

    Hearne G. R.; Musyimi P.; Bhattacharjee S.; Forthaus M. K.; Abd-Elmeguid M. M.;

  • 作者单位

    Univ Johannesburg Dept Phys POB 524 ZA-2006 Johannesburg South Africa;

    Univ Johannesburg Dept Phys POB 524 ZA-2006 Johannesburg South Africa;

    Univ Johannesburg Dept Phys POB 524 ZA-2006 Johannesburg South Africa;

    Univ Cologne Phys Inst 2 Zulpicher Str 77 D-50937 Cologne Germany;

    Univ Cologne Phys Inst 2 Zulpicher Str 77 D-50937 Cologne Germany;

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