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首页> 外文期刊>Physical review >Weak antilocalization and two-carrier electrical transport in Bi_(1-x)Sb_x single crystals (0%≤ x ≤ 17.0%)
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Weak antilocalization and two-carrier electrical transport in Bi_(1-x)Sb_x single crystals (0%≤ x ≤ 17.0%)

机译：Bi_（1-x）Sb_x单晶（0％≤x≤17.0％）的弱的反致大平化和双载波电气传输

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摘要

Experimental investigation of the weak antilocalization (WAL) effect on the Hall resistivity is quite rare, because the WAL is known to have no influence on the Hall effect in a single-band system. We challenge this view in a system that has both electrons and holes by deriving a two-band model modified by the WAL effect and by applying it to the low-field magnetoresistance (MR) and Hall resistance (HR) of Bi1-xSbx, single crystals (0% = x = 17.0%). Simultaneous occurrence of a dip in MR and nonlinearity in HR suggests that the Bi1-xSbx is a rare three-dimensional system, in which WAL and two distinct charge carriers interplay. The modified two-band model describes all the main features of MR and HR that are not captured by the conventional theory. From the quantitative analysis based on the modified theory, the values of key parameters, such as carrier density and mobility of electrons and holes, are estimated. The modified two-band model provides a solid framework for understanding electrical transport phenomena of a material with strong spin-orbit interaction and multiple distinct charge carriers.
机译：对霍尔电阻率的弱致大平化（WAL）效应的实验研究非常罕见，因为已知沃尔对单带系统中的霍尔效应没有影响。我们在一个系统中挑战这个视图，通过衍生由沃尔效应改造的双频模型，并通过将其应用于Bi1-xsbx的低场磁阻（MR）和霍尔电阻（HR）。晶体（0％<= x <= 17.0％）。 HR中的MR和非线性的同时发生浸入的浸渍和非线性的浸渍表明，BI1-XSBX是一种罕见的三维系统，其中WAL和两个不同的电荷载波相互作用。修改的双频模型描述了传统理论未被捕获的MR和HR的所有主要特征。根据基于修改理论的定量分析，估计关键参数的值，例如载波密度和电子和孔的移动性。改进的双频模型提供了一种坚实的框架，用于了解具有强大的旋转轨道相互作用和多个不同电荷载体的材料的电气传输现象。

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  • 来源
    《Physical review》 |2019年第12期|125162.1-125162.8|共8页
  • 作者

    Vu Duy Minh; Shon Wonhyuk; Rhyee Jong-Soo; Sasaki M.; Ohnishi A.; Kim Ki-Seok; Kim Heon-Jung;

  • 作者单位

    Daegu Univ Coll Nat & Life Sci Dept Phys Gyeongbuk 38453 South Korea;

    Kyung Hee Univ Dept Appl Phys Yongin 17104 South Korea|Kyung Hee Univ Inst Nat Sci Yongin 17104 South Korea;

    Kyung Hee Univ Dept Appl Phys Yongin 17104 South Korea|Kyung Hee Univ Inst Nat Sci Yongin 17104 South Korea;

    Yamagata Univ Fac Sci Dept Phys Yamagata 9908560 Japan;

    Yamagata Univ Fac Sci Dept Phys Yamagata 9908560 Japan;

    Pohang Univ Sci & Technol POSTECH Dept Phys Pohang 37673 Gyeongbuk South Korea;

    Daegu Univ Coll Nat & Life Sci Dept Phys Gyeongbuk 38453 South Korea|Daegu Univ Coll Engn Dept Mat Energy Sci & Engn Gyeongbuk 38453 South Korea;

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