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Off-stoichiometry effect on magnetic damping in thin films of Heusler alloy Co_2MnSi

机译：HEUSLER合金CO_2MNSI薄膜磁性阻尼的偏离化学计量效应

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摘要

We investigated the effect of off-stoichiometry on the Gilbert magnetic damping constant (α) of Heusler alloy Co_2MnSi (CMS) thin films by employing time-resolved magneto-optical Kerr effect (TR-MOKE) measurements along with first-principles calculations based on the linear-response theory for magnetic damping. Because of the contribution of extrinsic damping arising from two-magnon scattering, the effective α (α_(eff)) extracted from the TR-MOKE responses showed dependences on the in-plane magnetic-field angle (θ_H) and the field strength (H). Then, we obtained the smallest α_(eff) (α_0) for each sample under the most reduced contribution from two-magnon scattering realized through varying θ_H and H values, which is the closest value to a. The thus obtained α_0 values of epitaxially grown off-stoichiometric Co_2Mn_βSi_γ (γ = 0.82) films with various (Mn + Si) compositions, (β + γ), decreased with increasing (β + γ) from α_0 = 0.0057 for (Mn + Si)-deficient (β + γ) = 1.44 to α_0 = 0.0036 for (β + γ) = 1.90 being close to the stoichiometric one of (β + γ) = 2.0 at 300 K. It was also demonstrated that a half-metallic (Mn+Si)-rich CMS film with β = 1.30 and γ = 0.90 showed a low α_0 of 0.0035. The dependence of α_0 on (β + γ) in Co_2Mn_βSi_γ (γ = 0.82) was well explained by the first-principles calculations. Through the systematic investigations of off-stoichiometric CMS with various values of (β + γ), it was clarified that the total density of states (DOS) at the Fermi level, D(E_F), plays the key role for determining the damping constant of CMS. Furthermore, it was revealed that the reduced minority-spin DOS at E_F, caused by decreasing harmful Co_(Mn) antisites, is essential for reducing the damping constant of CMS. These findings demonstrate that appropriately controlling off-stoichiometry and film composition is thus promising for achieving half-metallicity and a low α simultaneously for CMS thin films.
机译：我们通过采用时间分辨的磁光克尔效应（TR-moke）测量以及基于的第一原理计算用于磁阻的线性响应理论。由于从两个MAGMON散射产生的外部阻尼的贡献，从TR-MOKE响应中提取的有效α（α_（eff））显示对面内磁场角（θ_h）和场强的依赖性（H. ）。然后，我们在通过改变θ_h和h值实现的来自两个-mmmmon散射的最小贡献下获得最小的α_（α_0），这是最接近a的最接近的值。由此获得的外延生长的脱离化学计量CO_2MN_βSI_γ（γ= 0.82）膜的α_0值用各种（Mn + Si）组合物（β+γ）降低，随着α_0= 0.0057的增加而增加（β+γ）（Mn + Si） ）（β+γ）= 1.44至α_0= 0.0036（β+γ）= 1.90接近（β+γ）= 2.0的化学计量之一，它也被证明是半金属（ Mn + Si） - 具有β= 1.30和γ= 0.90的Mn + Si）膜显示为0.0035的低α_0。 α_0上的（β+γ）在CO_2MN_βSI_γ（γ= 0.82）中的依赖性通过第一原理计算很好地解释。通过系统研究具有（β+γ）的各种值的脱离化学计量CMS，澄清了FERMI水平，D（E_F）的状态（DOS）的总密度起到确定阻尼常数的关键作用CMS。此外，揭示了通过减少有害CO_（MN）抗烧伤引起的少数族分裂DOS，对CMS的阻尼常数是必不可少的。这些发现表明，适当地控制脱离化学计量和薄膜组合物是有希望用于同时为CMS薄膜同时实现半金属性和低α。

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  • 来源
    《Physical review》 |2020年第17期|174410.1-174410.12|共12页
  • 作者

    Ting Li; Wei Yan; Xinhui Zhang; Bing Hu; Kidist Moges; Tetsuya Uemura; Masafumi Yamamoto; Masahito Tsujikawa; Masafumi Shirai; Yoshio Miura;

  • 作者单位

    State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 People's Republic of China College of Materials Science and Opto- Electronic Technology University of Chinese Academy of Sciences Beijing 100049 People's Republic of China;

    State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 People's Republic of China College of Materials Science and Opto- Electronic Technology University of Chinese Academy of Sciences Beijing 100049 People's Republic of China;

    State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 People's Republic of China College of Materials Science and Opto- Electronic Technology University of Chinese Academy of Sciences Beijing 100049 People's Republic of China;

    Division of Electronics for Informatics Graduate School of Information Science and Technology Hokkaido University Sapporo 060-0814 Japan;

    Division of Electronics for Informatics Graduate School of Information Science and Technology Hokkaido University Sapporo 060-0814 Japan;

    Division of Electronics for Informatics Graduate School of Information Science and Technology Hokkaido University Sapporo 060-0814 Japan;

    Division of Electronics for Informatics Graduate School of Information Science and Technology Hokkaido University Sapporo 060-0814 Japan;

    Research Institute of Electrical Communication Tohoku University Sendai 980-8577 Japan Center for Spintronics Research Network Tohoku University Sendai 980-8577 Japan;

    Research Institute of Electrical Communication Tohoku University Sendai 980-8577 Japan Center for Spintronics Research Network Tohoku University Sendai 980-8577 Japan;

    Research Center for Magnetic and Spintronic Materials National Institute for Materials Science (NIMS) Tsukuba 305-0047 Japan Center for Materials Research by Information Integration National Institute for Materials Science (NIMS) Tsukuba 305-0047 Japan Center for Spintronic Research Network Osaka University Toyonaka 560-8531 Japan;

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