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首页> 外文期刊>Physical review >Electron-electron interactions in low-dimensional Si:P delta layers
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Electron-electron interactions in low-dimensional Si:P delta layers

机译：低维Si中的电子 - 电子相互作用：P Delta层

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摘要

Scientists have long studied the physics of highly disordered conducting systems, seeking to understand the multitude of quantum phenomena that govern how electrons move through material systems. Recently, research into silicon-based quantum computing has made disordered conducting systems, such as Si:P monolayers embedded in isotopically pure Si, technically relevant. Consequently, applying and advancing the theoretical frameworks developed to describe electron behavior in disordered systems is a necessary objective in this field of research. This study investigates key components of dopant-based Si quantum computing devices: embedded regions of highly doped delta layers (δ layers). We examine the transport behavior and the electron-electron interaction (EEI) physics in embedded Si:P δ layers by means of self-consistent magnetotransport measurements. Parameters associated with the electronic transport offer a meaningful quantitative characterization of δ-layer quality and dopant diffusion. In addition, by examining EEI behaviors in a set of samples with embedded Si:P δ layers produced with different PH_3 exposure procedures prior to Si encapsulation, we show how details of material synthesis affect the dimensionality of charge carrier interactions in embedded Si:P δ layers. The relationship between δ-layer confinement and EEI screening lengths is established here. This understanding will help validate important models used for device simulation and design and lead to improvements in the control of electrostatic gating of and tunneling transport through Si:P single atom transistors.
机译：科学家长期研究了高度无序的导电系统的物理学，寻求了解众多量子现象，用于控制电子如何通过材料系统移动。最近，研究基于硅的量子计算已经使导电系统的紊乱，例如嵌入在同位素纯Si中的Si：P单层，技术上相关。因此，应用和推进制定的理论框架，以描述无序系统中的电子行为是该研究领域的必要目标。本研究研究了掺杂基的Si量子计算装置的关键部件：高度掺杂的δ层（δ层）的嵌入区域。我们通过自我一致的磁传输测量检查嵌入式Si：Pδ层中的传输行为和电子 - 电子相互作用（EEI）物理学。与电子传输相关的参数提供了Δ层质量和掺杂剂扩散的有意义的定量表征。另外，通过在Si封装之前用嵌入式Si的样本中的一组样品中的嵌入式Si：Pδ层检查EEI行为，我们展示了材料合成的细节如何影响嵌入式Si：Pδ中的电荷载流子相互作用的维度层。这里建立δ-层限制与EEI筛选长度之间的关系。这种理解将有助于验证用于设备仿真和设计的重要模型，并导致通过Si：P单个原子晶体管控制静电门控和隧道运输的控制。

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  • 来源
    《Physical review》 |2020年第24期|245419.1-245419.8|共8页
  • 作者

    Joseph A. Hagmann; Xiqiao Wang; Ranjit Kashid; Pradeep Namboodiri; Jonathan Wyrick; Scott W. Schmucker; M. D. Stewart Jr.; Richard M. Silver; Curt A. Richter;

  • 作者单位

    Physical Measurement Laboratory National Institute for Standards and Technology Gaithersburg Maryland 20899 USA;

    Physical Measurement Laboratory National Institute for Standards and Technology Gaithersburg Maryland 20899 USA;

    Physical Measurement Laboratory National Institute for Standards and Technology Gaithersburg Maryland 20899 USA;

    Physical Measurement Laboratory National Institute for Standards and Technology Gaithersburg Maryland 20899 USA;

    Physical Measurement Laboratory National Institute for Standards and Technology Gaithersburg Maryland 20899 USA;

    Physical Measurement Laboratory National Institute for Standards and Technology Gaithersburg Maryland 20899 USA;

    Physical Measurement Laboratory National Institute for Standards and Technology Gaithersburg Maryland 20899 USA;

    Physical Measurement Laboratory National Institute for Standards and Technology Gaithersburg Maryland 20899 USA;

    Physical Measurement Laboratory National Institute for Standards and Technology Gaithersburg Maryland 20899 USA;

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