...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Power Electronics, IET >Evaluation of the VSD-method for temperature estimation during power cycling of SiC-MOSFETs
【24h】

Evaluation of the VSD-method for temperature estimation during power cycling of SiC-MOSFETs

机译：评估SiC-MOSFET功率循环期间温度估算的VSD方法

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

An accurate temperature estimation is a substantial necessity to evaluate the outcome of a power cycling test. For devices with a forward biased pn-junction in the main current path, there is a well-known and understood method using its forward voltage drop at a small sensing current. Since metal-oxide-semiconductor field-effect transistors (MOSFETs) do not provide a pn-junction in forward mode, this method cannot be applied directly. A similar method to estimate the junction temperature of a MOSFET is the V-SD(T)-method, which uses the junction of the reverse body diode. While this method is gaining wide acceptance for junction temperature estimation during power cycling of silicon carbide MOSFETs, no comprehensive investigation on its accuracy, stability and susceptibility towards degradational shift has been performed so far. In this work, the results of an investigation on the V-SD(T)-method with an evaluation of its precision and suitability for temperature estimation during power cycling tests of silicon carbide MOSFETs are presented.
机译：准确的温度估算是评估电源循环测试结果的基本必要条件。对于在主电流路径中具有正向偏置pn结的器件，有一种众所周知的方法，即在小检测电流下使用其正向压降。由于金属氧化物半导体场效应晶体管（MOSFET）在正向模式下不提供pn结，因此无法直接应用此方法。估算MOSFET结温的类似方法是V-SD（T）方法，该方法使用反向体二极管的结。尽管此方法在碳化硅MOSFET的功率循环期间结温度估算方面获得了广泛认可，但迄今为止，尚未对其准确性，稳定性和对降级漂移的敏感性进行全面研究。在这项工作中，提出了对V-SD（T）方法的研究结果，并对其在碳化硅MOSFET的功率循环测试期间其精度和温度估计的适用性进行了评估。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号