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Multi-megahertz quasi-square-wave flyback converter using eGaN FETs

机译：使用eGaN FET的多兆赫兹准方波反激转换器

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摘要

As the fast development of the better figure-of-merits gallium nitride (GaN) devices, the switching frequency of isolated flyback converter could be pushed to multi-megahertz to evaluate the improvement of the power density. A constant frequency zero-voltage switching (ZVS) quasi-square-wave (QSW) mode is applied to the 30 W flyback in telecommunication application, and a charge conservation method including capacitor non-linearity is proposed to design the coupled inductors for soft switching over entire input and load range. Leakage inductance, eddy losses and parasitic capacitance were quantified and optimised in the design of high-frequency PCB windings. A 98% coupling planar-coupled inductors by utilising nickel-zinc ferrite material with EI-shaped core were designed by finite-element simulation. To validate all the analysis, a 30 W flyback converter was fabricated and measured with peak efficiency of 90.6% operating at 5 MHz. The coupled inductors consumed almost 2.5% of the output power with the area of 180 mm occupied 30% of the power stage.
机译：随着更好的品质因数氮化镓（GaN）器件的快速发展，隔离式反激转换器的开关频率可以提高到几兆赫兹，以评估功率密度的提高。将恒定频率零电压开关（ZVS）准方波（QSW）模式应用于电信应用中的30 W反激，并提出了一种包含电容器非线性的电荷守恒方法来设计用于软开关的耦合电感器在整个输入和负载范围内。在高频PCB绕组设计中，对泄漏电感，涡流损耗和寄生电容进行了量化和优化。通过有限元仿真，设计了利用镍锌铁氧体材料和EI形铁芯的98％平面耦合电感。为了验证所有分析结果，制造了一个30 W反激转换器，并在5 MHz下工作时测得的峰值效率为90.6％。耦合电感消耗了几乎2.5％的输出功率，而180 mm的面积占据了功率级的30％。

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