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首页> 外文期刊>精密工学会誌 >CRYSTALLOGRAPHIC CHARACTERIZATION OF SURFACE DAMAGE IN DIAMOND-TURNED SINGLE-CRYSTAL SILICON
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CRYSTALLOGRAPHIC CHARACTERIZATION OF SURFACE DAMAGE IN DIAMOND-TURNED SINGLE-CRYSTAL SILICON

机译：金刚石单晶硅表面损伤的晶体学表征

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Diamond-turned single-crystal silicon surfaces and formed chips were studied by transmission electron microscope (TEM) method. The crystallographic structure of ductile-regime turned surfaces consisted of amorphous material forming a thin surface layer with underlying dislocations generated by the {111}<110> slip systems. Continuous chips were also converted into amorphous material by turning. As depth of cut increased, microcracks were partially formed through the accumulation of excessive dislocations, and consequently brittle fractures occurred. Under these conditions, no continuous chips were obtained. The chips were fragmented and polycrystalline, and contained many crystal defects. At a greater depth of cut, where the material removal mechanism was governed by brittle fracture, the turned surfaces were covered with microcracks, and few dislocations were observed in the damaged layer. Even though the continuous chips had been obtained using a diamond tool with a sharp cutting edge, their structure remained that of single crystal. At a greater depth of cut, where the material removal mechanism was governed by brittle fracture, the turned surfaces were covered with microcracks, and few dislocations were observed in the damaged layer. Even though the continuous chips had been obtained using a diamond tool with a sharp cutting edge, their structure remained that of single crystal. TEM observations revealed that amorphization and {111}<110> slip deformation are essential in realizing ductile-regime turning of single-crystal silicon.
机译：用透射电子显微镜（TEM）研究了金刚石车削的单晶硅表面和形成的芯片。延性转变表面的晶体学结构由非晶材料组成，该非晶材料形成薄表面层，该薄表面层具有由{111} <110>滑移系统产生的潜在位错。连续切屑也通过车削转化为非晶态材料。随着切削深度的增加，由于过度的位错的积累而部分地形成了微裂纹，因此发生了脆性断裂。在这些条件下，没有获得连续的切屑。芯片碎裂且多晶，并包含许多晶体缺陷。在较大的切削深度处，材料去除机制受脆性断裂支配，车削表面被微裂纹覆盖，在受损层中几乎观察不到位错。即使使用具有锋利切削刃的金刚石工具获得了连续的切屑，它们的结构仍然是单晶的。在较大的切削深度处，材料去除机制受脆性断裂支配，车削表面被微裂纹覆盖，在受损层中几乎观察不到位错。即使使用具有锋利切削刃的金刚石工具获得了连续的切屑，它们的结构仍然是单晶的。 TEM观察表明，非晶化和{111} <110>滑移变形对于实现单晶硅的延展性车削至关重要。

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