首页> 外文期刊>Proceedings of the institution of mechanical engineers >Growth of single crystal silicon carbide by liquid phase epitaxy using samarium/cobalt as unique solvent
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Growth of single crystal silicon carbide by liquid phase epitaxy using samarium/cobalt as unique solvent

机译:以sa /钴为唯一溶剂的液相外延生长单晶碳化硅

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摘要

An approach for synthesizing single crystal silicon carbide at low temperature using liquid phase epitaxy is proposed. A mixture of samarium and cobalt (Sm∶Co = 64∶36 at.%) was used as a unique solvent in this synthesis process. Electron microscopy indicates the epitaxial growth of single crystal silicon carbide with a thickness of 4 μm over a silicon wafer followed by the formation of polycrystalline silicon carbide and silicon carbide whiskers. Some growth mechanisms are proposed to explain the formation of silicon carbide. It is hypothesized that the single crystal silicon carbide grew from the liquid phase, whereas polycrystalline silicon carbide whiskers grew via the vapor-liquidsolid process.
机译:提出了一种利用液相外延低温合成单晶碳化硅的方法。 this和钴的混合物(Sm∶Co = 64∶36 at。%)被用作该合成过程中的独特溶剂。电子显微镜表明在硅晶片上外延生长厚度为4μm的单晶碳化硅,然后形成多晶硅和碳化硅晶须。提出了一些生长机理来解释碳化硅的形成。假设单晶碳化硅从液相中生长出来,而多晶碳化硅晶须则通过气液固过程生长。

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