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首页> 外文期刊>Proceedings of the IEEE >Low-Voltage Tunnel Transistors for Beyond CMOS Logic
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Low-Voltage Tunnel Transistors for Beyond CMOS Logic

机译:超越CMOS逻辑的低压隧道晶体管

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摘要

Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal–oxide–semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply voltages approach 0.1 V.
机译:对基于带间隧穿的陡峭亚阈值摆幅晶体管进行了研究,以扩展电子系统的性能。特别是,本篇综述介绍并总结了隧道场效应晶体管(TFET)的开发进展,包括其起源,相对于金属氧化物半导体场效应晶体管(MOSFET)的电流实验和理论性能,基本电流运输理论,设计权衡和基本挑战。 TFET的希望在于,当电源电压接近0.1 V时,它能够提供比MOSFET高的驱动电流。

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