In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor

Theis T. N.; Solomon P. M.

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In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor

机译：寻求“下一个开关”：硅场效应晶体管后继产品中功耗大大降低的前景

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Reduced power dissipation relative to the field-effect transistor (FET) is a key attribute that should be possessed by any device that has a chance of supplanting the FET as the ubiquitous building block for complex digital logic. We outline the possible physical approaches to achieving this attribute, and illustrate these approaches by citing current exploratory device research. We assess the value of the key exploratory research objectives of the semiconductor industry-sponsored Nanoelectronics Research Initiative (NRI) in the light of this pressing need to reduce dissipation in future digital logic devices.

机译：相对于场效应晶体管（FET）而言，功耗的降低是任何有可能取代FET作为复杂数字逻辑无处不在的构建模块的设备都应具有的关键属性。我们概述了实现此属性的可能的物理方法，并通过引用当前的探索性设备研究来说明这些方法。鉴于迫切需要减少未来数字逻辑器件的功耗，我们评估了半导体行业发起的纳米电子研究计划（NRI）的主要探索性研究目标的价值。

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来源
《Proceedings of the IEEE》 |2010年第12期|p.2005-2014|共10页
作者
Theis T. N.; Solomon P. M.;
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作者单位

T.J. Watson Research Center, IBM Research, Yorktown Heights, NY, USA;

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原文格式 PDF
正文语种 eng
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Adiabatic switching; ferroelectric devices; low power; low-voltage logic devices; magnetic logic devices; negative capacitance; spin-FET; tunnel-FET;

机译：绝热开关铁电器件低功耗低压逻辑器件磁逻辑器件负电容自旋FET隧道FET;

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1. Steep-Switching Fully Depleted Silicon-on-Insulator (FDSOI) Phase-Transition Field-Effect Transistor With Optimized HfO₂/Al₂O₃-Multilayer-Based Threshold Switching Device [J] . Han Sangwoo, Jeong Sojin, Shin Jaemin, IEEE Transactions on Electron Devices . 2021,第3期

机译：陡峭的切换完全耗尽的绝缘体（FDSOI）相变场效应晶体管，具有优化的HFO 2 / Al 2 O 1 - 基于多层的阈值开关装置
2. A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors [J] . D. P. Ettisserry, N. Goldsman, A. Lelis Journal of Applied Physics . 2014,第10期

机译：识别和量化4H碳化硅功率金属氧化物半导体场效应晶体管中降低迁移率的缺陷的方法
3. Study on Various Device Structures for Steep-Switching Silicon-on-Insulator Feedback Field-Effect Transistors [J] . Lee Changhoon, Shin Changhwan IEEE Transactions on Electron Devices . 2020,第4期

机译：陡峭切换硅 - 绝缘体反馈场效应晶体管的各种装置结构研究
4. Switching Capability Evaluation of GaN Power Field-effect Transistors Using a New Intrinsic Maximum Switching Frequency Figure-of-merit [C] . Zhibo Guo, T. Paul Chow 2015 CPES power electronics conference . 2015

机译：使用新的固有最大开关频率品质因数的GaN功率场效应晶体管的开关能力评估
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation [O] . Antonio Martinez, John R. Barker 2020

机译：硅纳米线FET晶体管中的量子传输：热电子和局部功耗
7. Temperature-independent switching rates for a random telegraph signal in a silicon metal–oxide–semiconductor field-effect transistor at low temperatures [O] . John H. Scofield, Nick Borland, D. M. Fleetwood 2000

机译：在低温下硅金属氧化物半导体场效应晶体管中随机电报信号的温度无关的开关速率

In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor

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