Possibilities of deep-submicrometer CMOS for very-high-speed computer logic

Masaki A.

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Possibilities of deep-submicrometer CMOS for very-high-speed computer logic

机译：深亚微米CMOS用于超高速计算机逻辑的可能性

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It is shown that room-temperature CMOS, which has rarely been considered suitable for very-high-speed computer logic, can have sufficient performance to be the post-ECL (emitter-coupled logic) high-speed device when deep-submicrometer technology is available. The possibilities of CMOS are evaluated in the context of the very many factors related to computer logic. In a case study, it is shown that system performance comparable to that of the most modern large-scale computers is obtainable with room-temperature operation, assuming CMOS devices with gate length of 0.2-0.25 mu m. Further possibilities for performance improvement and the advantage of CMOS compared with other technologies are discussed.

机译：结果表明，当深亚微米技术被采用时，很少被认为适合于超高速计算机逻辑的室温CMOS可以具有足以作为后ECL（发射极耦合逻辑）高速器件的性能。可用。在与计算机逻辑有关的许多因素的背景下评估了CMOS的可能性。案例研究表明，假设CMOS器件的栅极长度为0.2-0.25μm，则在室温条件下可获得与大多数现代大型计算机相当的系统性能。与其他技术相比，讨论了性能提高的更多可能性以及CMOS的优势。

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《Proceedings of the IEEE》 |1993年第9期|P.1311-1324|共14页
作者
Masaki A.;
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正文语种 eng
中图分类一般性问题;无线电电子学、电信技术;
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Possibilities of deep-submicrometer CMOS for very-high-speed computer logic

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