Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystals

TU Hailing; XIAO Qinghua; GAO Yu; ZHOU Qigang; ZHANG Guohu; CHANG Qing

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Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystals

机译：大直径硅晶体的直拉晶体生长过程的数值分析和模拟

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Numerical analysis and simulation have been an effective means to develop the advanced growth technology and to control the defects type, size and density for silicon crystals of 300 mm and beyond. In the present paper, numerical analysis of the melt flow in the Czochralski (CZ) crystal growth configuration, the three dimensional (3D) modeling, the simulation of melt flow under the magnetic field, the inverse modeling and the time-dependent simulation are reviewed. Finally, comparison of numerical analysis with experimental measurements is discussed.

机译：数值分析和仿真是发展先进的生长技术并控制300mm及以上的硅晶体的缺陷类型，尺寸和密度的有效手段。在本文中，对Czochralski（CZ）晶体生长配置中的熔体流动进行了数值分析，三维（3D）建模，磁场下的熔体流动模拟，逆建模和时变模拟进行了综述。。最后，讨论了数值分析与实验测量的比较。

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来源
《RARE METALS》 |2007年第6期|p.521-527|共7页
作者
TU Hailing; XIAO Qinghua; GAO Yu; ZHOU Qigang; ZHANG Guohu; CHANG Qing;
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正文语种 eng
中图分类金属材料;有色金属及其合金;
关键词
silicon; numerical simulation; crystal growth;

机译：硅;数值模拟;晶体生长;

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1. Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystals [J] . TU Hailing, XIAO Qinghua, GAO Yu, RARE METALS . 2007,第6期

机译：大直径硅晶体的直拉晶体生长过程的数值分析和模拟
2. Numerical simulation of the oxygen distribution in silicon melt for different argon gas flow rates during Czochralski silicon crystal growth process [J] . Zumrotul Ida, Jyh-Chen Chen, Thi Hoai Thu Nguyen MATEC Web of Conferences . 2018,第5期

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Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystals

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