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首页> 外文期刊>Recent patents on materials science >Perspective Methods for Producing Composite Materials Based on Carbon, Silicon and Silicon Carbide: Progress and Challenges
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Perspective Methods for Producing Composite Materials Based on Carbon, Silicon and Silicon Carbide: Progress and Challenges

机译：基于碳，硅和碳化硅的复合材料生产的透视方法：进展与挑战

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Abstract: The patent review is devoted to consideration and analysis of several methods of producing materials and articles based on carbon, silicon and silicon carbide. Common to these methods are: (i) the use of carbon as initial material for growth of Si or SiC, (ii) the use of single crystal Si as substrate for synthesis of nanocrystalline carbon, (iii) execution of the processes at low pressure of the reagents and their strong chemical interaction. The methods considered do not imply preliminary grinding of initial components, their sintering, hot pressing, etc. In fact, this group of methods and relevant materials hold a peculiar position between crystal growth and techniques of producing composite materials. The analysis made allows formulating the following debatable conclusions: (a) non-porous SiC-Si composites forming upon direct contact of molten silicon with fibrous carbons can be used as resistive material in diverse technical applications; (b) in spite of the wide variety of methods of growing solar grade silicon sheets, only self-supported methods can be regarded as viable; the optimal silicon sheet structure includes parallel twin boundaries, the average dislocation density should not exceed 10~5 cm~(-2); (c) deep purification of bulk graphite is possible under the conditions of cycling inlet/outlet of halogen agents; the process realized can be environmentally safe even when using Freon; (d) carbon nanoclusters produced by chemical vapor deposition can be considered as components for creation of drug delivery preparations.
机译：摘要：该专利审查致力于考虑和分析几种基于碳，硅和碳化硅的材料和制品的生产方法。这些方法的共同点是：（i）使用碳作为生长Si或SiC的初始材料，（ii）使用单晶Si作为合成纳米晶碳的衬底，（iii）在低压下进行工艺试剂及其强烈的化学相互作用。所考虑的方法并不意味着初始部件的初步研磨，烧结，热压等。实际上，这组方法和相关材料在晶体生长和生产复合材料的技术之间占有特殊的位置。通过进行分析，可以得出以下有争议的结论：（a）在熔融硅与纤维碳直接接触后形成的无孔SiC-Si复合材料可以在各种技术应用中用作电阻材料； （b）尽管有各种各样的生长太阳能级硅片的方法，但只有自力更生的方法才被认为是可行的；最佳的硅片结构包括平行的孪晶边界，平均位错密度不应超过10〜5 cm〜（-2）； （c）在循环循环卤素试剂的进出口条件下，可以对大块石墨进行深度纯化；即使使用氟利昂，所实现的过程也可能对环境安全； （d）通过化学气相沉积产生的碳纳米团簇可被视为创造药物输送制剂的成分。

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