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首页> 外文期刊>Renewable energy >Comparison of minority carrier diffusion length measurements in silicon solar cells by the photo-induced open-circuit voltage decay (OCVD) with different excitation sources
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Comparison of minority carrier diffusion length measurements in silicon solar cells by the photo-induced open-circuit voltage decay (OCVD) with different excitation sources

机译:通过不同激发源的光致开路电压衰减(OCVD)比较硅太阳能电池中少数载流子扩散长度的测量

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摘要

The photoinduced open-circuit voltage decay technique was used to investigate the minority carrier lifetime in crystalline and polycrystalline silicon solar cells. This convenient investigation technique allows a fast determination of the diffusion length of minority carriers in semiconductor materials and is an important technique to predict the solar cell performance. The decay curves were obtained with different excitation sources, a xenon stroboscope lamp and a Nd: YAG laser, and the results were compared.
机译:使用光致开路电压衰减技术来研究晶体和多晶硅太阳能电池中少数载流子的寿命。这种便利的研究技术可以快速确定少数载流子在半导体材料中的扩散长度,并且是预测太阳能电池性能的重要技术。使用不同的激发源,氙气频闪灯和Nd:YAG激光器获得了衰减曲线,并对结果进行了比较。

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