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In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers

机译：高增益高带宽低噪声跨阻放大器中寄生元件的在线测量

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摘要

Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design.
机译：寄生元件在每个高性能电路的开发中都起着重要作用。对于高增益，高带宽跨阻放大器，最重要的寄生元件是输入和反馈路径中的寄生电容，这会严重影响放大器的稳定性，频率响应和噪声。由于这些寄生电容的范围从几微微法拉到仅几毫微微法拉，因此几乎不可能使用传统的LCR表对其进行精确测量。不幸的是，它们也不能轻易地由互阻放大器的传递函数确定，因为它包含多个重叠效应，并且仅当电路已经稳定时才可以进行测量。因此，我们开发了一种在线测量方法，该方法利用对输入级的最小修改，以便直接且无条件地测量其寄生电容。此外，使用通过该测量技术获得的数据，我们都针对高值厚膜电阻器在高增益跨阻放大器中使用时的复杂频率响应提出了一个模型，并优化了我们的跨阻放大器设计。

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  • 来源
    《Review of Scientific Instruments》 |2014年第12期|1-6|共6页
  • 作者

    Cochems P.; Kirk A.; Zimmermann S.;

  • 作者单位

    Institute of Electrical Engineering and Measurement Technology, Department of Sensors and Measurement Technology, Leibniz University Hannover, Hannover, Germany;

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