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An atomic layer deposition reactor with dose quantification for precursor adsorption and reactivity studies

机译:具有剂量定量的原子层沉积反应器,用于前体吸附和反应性研究

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摘要

An atomic layer deposition reactor has been constructed with quantitative, precision dose control for studying precursor adsorption characteristics and to relate dose quantity and exposure dynamics to fluid flow in both the viscous and molecular flow regimes. A fixed volume of gas, held at a controlled temperature and measured pressure, is dosed into the reaction chamber by computer-controlled pneumatic valves. Dual in situ quartz crystal microbalances provide parallel mass measurement onto two differently coated substrates, which allows adsorption coverage and relative sticking coefficients to be determined. Gas composition in the reaction chamber was analyzed in situ by a quadrupole mass spectrometer. Absolute reactant exposure is unambiguously calculated from the impingement flux, and is related to dose, surface area, and growth rates. A range of control over the dose amount is demonstrated and consequences for film growth control are demonstrated and proposed.
机译:已经构造了具有定量精确剂量控制的原子层沉积反应器,用于研究前驱体的吸附特性,并将剂量和暴露动力学与粘性和分子流动方式下的流体流动联系起来。通过计算机控制的气动阀将固定体积的气体(保持在受控的温度和测得的压力下)注入反应室。双原位石英晶体微量天平可以在两个不同涂层的基材上进行平行质量测量,从而可以确定吸附覆盖率和相对粘附系数。用四极质谱仪原位分析反应室内的气体组成。绝对反应物暴露是根据撞击流量明确计算的,并且与剂量,表面积和生长速率有关。证明了对剂量量的控制范围,并且证明并提出了对膜生长控制的后果。

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