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首页> 外文期刊>Review of Scientific Instruments >A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers
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A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers

机译：一种用于硅晶片的发射率补偿辐射测温的降低背景辐射的方法

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We studied the spectral and directional emissivities of silicon wafers using an optical polarization technique. Based on simulation and experimental results, we developed two radiation thermometry methods for silicon wafers: one is based on the polarized emissivity-invariant condition and the other is based on the relationship between the ratio of the p- and s-polarized radiance and the polarized emissivity. These methods can be performed at temperatures above 600 °C and over a wide wavelength range (0.9–4.8 μm), irrespective of the dielectric film thickness and the substrate resistivity, which depends on the dopant concentration. The temperature measurements were estimated to have expanded uncertainties (k = 2) of less than 5 °C. With a view to practically applying these methods, we investigated a method to reduce the intense background radiance produced by high-intensity heating lamps. We found that the background radiance can be greatly reduced by using a radiometer that is sensitive to wavelengths of 4.5 or 4.8 μm and suitable geometrical arrangements of a quartz plate. This opens up the possibility of using the two proposed radiation thermometry methods in practical applications.
机译：我们使用光偏振技术研究了硅晶片的光谱和方向发射率。根据仿真和实验结果，我们开发了两种用于硅晶片的辐射测温方法：一种是基于偏振发射率不变条件，另一种是基于p和s偏振辐射比与偏振之间的关系。发射率。这些方法可以在高于600°C的温度和宽波长范围（0.9–4.8μm）内执行，而与介电膜厚度和衬底电阻率无关，这取决于掺杂剂的浓度。估计温度测量值的不确定性扩大（k = 2）小于5°C。为了实际应用这些方法，我们研究了一种减少高强度加热灯产生的强烈背景辐射的方法。我们发现，通过使用对4.5或4.8μm波长敏感的辐射计以及石英板的适当几何布置，可以大大降低背景辐射。这开辟了在实际应用中使用两种建议的辐射测温方法的可能性。

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