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首页> 外文期刊>Review of Scientific Instruments >A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals
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A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals

机译:350 mK,9 T扫描隧道显微镜,用于研究绝缘基板和单晶上的超导薄膜

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摘要

We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350 mK and in magnetic fields up to 9 T, with thin film deposition and in situ single crystal cleaving capabilities. The main focus lies on the simple design of STM head and a sample holder design that allows us to get spectroscopic data on superconducting thin films grown in situ on insulating substrates. Other design details on sample transport, sample preparation chamber, and vibration isolation schemes are also described. We demonstrate the capability of our instrument through the atomic resolution imaging and spectroscopy on NbSe2 single crystal and spectroscopic maps obtained on homogeneously disordered NbN thin film.
机译:我们报告了低温,高场扫描隧道显微镜(STM)的构造和性能,该显微镜在350 mK的磁场下和9 T的磁场中具有薄膜沉积和原位单晶分裂能力。主要焦点在于STM头的简单设计和样品架设计,该设计使我们能够获得在绝缘基板上原位生长的超导薄膜的光谱数据。还介绍了有关样品运输,样品制备室和隔振方案的其他设计细节。我们通过原子分辨率成像和NbSe2单晶光谱学以及在均匀无序NbN薄膜上获得的光谱图证明了我们仪器的能力。

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