Large capacity As2 source for molecular beam epitaxy

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Large capacity As2 source for molecular beam epitaxy

机译：大容量As2源用于分子束外延

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Molecular beam epitaxy (MBE) is a crystal growth technique capable of growing ultrathin layered heterostructures for basic studies, and devices such as modulation doped field‐effect transistors (MODFET’s), heterojunction lasers, heterojunction bipolar transistors (HBT’s), and superlattices. By using a dimeric arsenic source to grow GaAs and AlGaAs layers, the crystalline quality of these devices and structures may be improved, ultimately improving device performance. The design of a novel large capacity effusion cell (capable of producing about 700 μm GaAs growth) for cracking tetrameric arsenic into dimeric arsenic and the results of its use are described.

机译：分子束外延（MBE）是一种晶体生长技术，能够生长用于基础研究的超薄层异质结构，以及诸如调制掺杂场效应晶体管（MODFET），异质结激光器，异质结双极晶体管（HBT）和超晶格之类的器件。通过使用二聚砷源生长GaAs和AlGaAs层，可以改善这些器件和结构的晶体质量，最终改善器件性能。描述了用于将四聚砷裂解为二聚砷的新型大容量积水池（能够产生约700μmGaAs生长）的设计及其使用结果。

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《Review of Scientific Instruments》 |1984年第11期|P.1763-1766|共4页
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1. Relation between growth conditions and reconstruction on InAs during molecular beam epitaxy using an As2 source [J] . Journal of Applied Physics . 1984,第12期

机译：使用As2源进行分子束外延生长期间生长条件与InAs重建之间的关系
2. Surface Properties of SiC Layer Grown by Molecular Beam Epitaxy (MBE) with Helicon Sputtering Molecular Beam Source [J] . Akira KAKUTA, Nobuyuki MORONUKP, Yuji FURUKAWA JSME International Journal. Series C, Mechanical Systems, Machine Elements and Manufacturing . 2004,第1期

机译：分子束外延与分子束外延溅射分子束外延生长的SiC层的表面性能
3. Surface Properties of SiC Layer Grown by Molecular Beam Epitaxy (MBE) with Helicon Sputtering Molecular Beam Source [J] . Akira KAKUTA, Nobuyuki MORONUKP, Yuji FURUKAWA JSME International Journal. Series C, Mechanical Systems, Machine Elements and Manufacturing . 2004,第1期

机译：螺旋溅射分子束源的分子束外延（MBE）生长的SiC层的表面性能
4. Emission wavelength variation of InAs quantum dots grown on GaAs using As2 molecules in molecular beam epitaxy [C] . Yuma Hayashi, Nobuhiko Ozaki, Shunsuke Ohkouchi, International Conference on Indium Phosphide & Related Materials;International Symposium on Compound Semiconductors;Compound Semiconductor Week . 2016

机译：利用As2分子在GaAs上生长的InAs量子点在分子束外延中的发射波长变化
5. Molecular beam epitaxy and characterization of gallium arsenic nitride and its application to quantum dot cascade light sources. [D] . Fischer, Carl H., IV. 2004

机译：氮化镓砷的分子束外延与表征及其在量子点级联光源中的应用。
6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

机译：分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质：热退火的影响
7. Surface Properties of SiC Layer Grown by Molecular Beam Epitaxy (MBE) with Helicon Sputtering Molecular Beam Source [O] . Akira KAKUTA, Nobuyuki MORONUKI, Yuji FURUKAWA 2004

机译：用Helicon溅射分子束源通过分子束外延（MBE）生长的SiC层的表面特性
8. Enhancement of Carrier Concentration and Spatial Confinement in Molecular-BeamEpitaxial Si and Be Delta-Doped GaAs by Increasing As4/As2 Flux Ratio [R] . Shih, Y. C., Block, T. R., Streetman, B. G. 1992

机译：通过提高as4 / as2流量比增强分子束外延si和Be掺杂Gaas中载流子浓度和空间限制

Large capacity As2 source for molecular beam epitaxy

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