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Use of Monte Carlo Modeling for Interpreting Scanning Electron Microscope Linewidth Measurements

机译：使用蒙特卡洛模型解释扫描电子显微镜线宽测量

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摘要

A scanning electron microscope (SEM) can be used to measure the dimensions of the microlithographic features of integrated circuits. However, without a good model of the electron-beam/specimen interaction, accurate edge location cannot be obtained. A Monte Carlo code has been developed to model the interaction of an electron beam with one or two lines lithographically produced on a multilayer substrate. The purpose of the code is to enable one to extract the edge position of a line from SEM measurements. It is based on prior codes developed at the National Institute of Standards and Technology, but with a new formulation for the atomic scattering cross sections and the inclusion of a method to simulate edge roughness or rounding. The code is currently able to model the transmitted and backscattered electrons, and the results from the code have been applied to the analysis of electron transmission through gold lines on a thin silicon substrate, such as is used in an x-ray lithographic mask. Significant reductions in backscattering occur because of the proximity of a neighboring line.
机译：扫描电子显微镜（SEM）可用于测量集成电路的微光刻特征的尺寸。但是，如果没有良好的电子束/标本相互作用模型，就无法获得准确的边缘位置。已经开发出蒙特卡罗代码以对电子束与在多层基板上光刻产生的一条或两条线的相互作用进行建模。该代码的目的是使人们能够从SEM测量中提取一条线的边缘位置。它基于美国国家标准技术研究所开发的先前代码，但是采用了针对原子散射截面的新公式，并包含了一种模拟边缘粗糙度或倒圆角的方法。该代码当前能够对传输的电子和反向散射的电子进行建模，并且该代码的结果已应用于通过薄硅基板上的金线（例如X射线光刻掩模中所用的电子）的电子传输分析。由于邻近线的接近，导致反向散射的显着减少。

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