...
首页> 外文期刊>Science of advanced materials >Synthesis and Photoluminscence Properties of Morphology- and Microstructure-Controlled S-Doped ZnO Nanostructures
【24h】

Synthesis and Photoluminscence Properties of Morphology- and Microstructure-Controlled S-Doped ZnO Nanostructures

机译:形貌和微结构控制的S掺杂ZnO纳米结构的合成及光致发光特性

获取原文
获取原文并翻译 | 示例
           

摘要

By thermal evaporating ZnS and Zn powders and changing the concentration of Zn vapor in a two heating-zone tube furnace, a series of S-doped ZnO nanostructures, such as nanoribbons and nanorotors of nanonails, microflowers of nanonails and nanoneedles, aligned nanoneedle arrays and nanobelts, were successfully synthesized on silicon substrate. The as-synthesized products were investigated by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and photoluminescence spectroscopy. The present method provides an approach to control the growth of nanowires and it might be easily extended to fabricate other one-dimensional doped ZnO nanostructures.
机译:通过在两个加热区管式炉中热蒸发ZnS和Zn粉并改变Zn蒸气的浓度,可以得到一系列S掺杂的ZnO纳米结构,例如纳米带和纳米转子的纳米指甲,纳米指甲和纳米针的微花,对齐的纳米针阵列和纳米带成功地在硅衬底上合成。通过扫描电子显微镜,X射线衍射,透射电子显微镜,能量色散X射线光谱和光致发光光谱对合成后的产物进行了研究。本方法提供了一种控制纳米线生长的方法,并且可以容易地扩展以制造其他一维掺杂的ZnO纳米结构。

著录项

  • 来源
    《Science of advanced materials》 |2017年第4期|316-320|共5页
  • 作者单位

    HuBei Univ Arts & Sci, Hubei Key Lab Power Syst Design & Test Elect Vehi, Xiangyang 430056, Peoples R China|HuBei Univ Arts & Sci, Hubei Key Lab Low Dimens Optoelect Mat & Devices, Xiangyang 441053, Peoples R China;

    HuBei Univ Arts & Sci, Hubei Key Lab Low Dimens Optoelect Mat & Devices, Xiangyang 441053, Peoples R China;

    HuBei Univ Arts & Sci, Hubei Key Lab Low Dimens Optoelect Mat & Devices, Xiangyang 441053, Peoples R China;

    HuBei Univ Arts & Sci, Hubei Key Lab Low Dimens Optoelect Mat & Devices, Xiangyang 441053, Peoples R China;

    HuBei Univ Arts & Sci, Hubei Key Lab Power Syst Design & Test Elect Vehi, Xiangyang 430056, Peoples R China;

    HuBei Univ Arts & Sci, Hubei Key Lab Low Dimens Optoelect Mat & Devices, Xiangyang 441053, Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Semiconductors; Vapor Deposition; S-Doped Zn; Optical Properties;

    机译:半导体;气相沉积;S掺杂的Zn;光学性质;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号