ANALYSIS OF INTERACTIONS IN Cr-DOPED ZnSe SEMI CONDUCTOR

HARISH CHANDRA ROY; O.P. SINGH

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ANALYSIS OF INTERACTIONS IN Cr-DOPED ZnSe SEMI CONDUCTOR

机译：Cr掺杂的ZnSe半导体中的相互作用分析

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Various processes and their energies of Cr-doped ZnSe semiconductors have been analysed on first Principles. Our results for highly Cr-doped ZnSe show small variations in the equilibrium configurations, forces and electronic density around the Cr for different charge states. Hence, the delocalization of the electronic charge between the impurity and host leads to a decrease of the effective coulomb repulsion and becomes the fundamental mechanism to inhibit nonradiative recombination via multiphonon 'emission for the modes.

机译：在第一原理上已经分析了掺Cr的ZnSe半导体的各种工艺及其能量。我们对高Cr掺杂的ZnSe的结果表明，在不同电荷状态下，Cr周围的平衡构型，力和电子密度的变化很小。因此，杂质和主体之间电荷的离域化导致有效库仑排斥的降低，并成为通过多声子发射抑制非辐射复合的基本机制。

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来源
《Acta Ciencia Indica》 |2011年第2期|p.123-126|共4页
作者
HARISH CHANDRA ROY; O.P. SINGH;
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作者单位

Department of Physics, M.R. Janta College, Ujiarpur, Samastipur (Bihar);

P.G. Deptl. of Physics, J.P. University, Chopra (Bihar);

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正文语种 eng
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关键词
cr-doped znse semiconductors; electronic states; host-impurity interactions; charge-transfer;

机译：Cr掺杂的znse半导体;电子状态宿主-杂质相互作用;电荷转移;

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ANALYSIS OF INTERACTIONS IN Cr-DOPED ZnSe SEMI CONDUCTOR

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