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首页> 外文期刊>Science, Measurement & Technology, IET >Effect of magnetic coupling between the mounting loops of two parallel capacitors on antiresonance
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Effect of magnetic coupling between the mounting loops of two parallel capacitors on antiresonance

机译：两个并联电容器安装回路之间的磁耦合对反谐振的影响

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摘要

A microprocessor board comprises many capacitors in parallel for decoupling purposes. Due to space constraints, they are kept close to each other. When two capacitors with different self-resonant frequencies are connected in parallel, between their self-resonant frequencies an impedance peak known as antiresonance is introduced. If the capacitors are placed close to each other, their mounting loops are magnetically coupled. This coupling affects the antiresonance peak value, which is studied in this study. An expression for the peak value of antiresonance is derived using circuit theory, and it is compared with accurate solutions obtained in Matlab™. A general critical damping condition is formulated based on this. The expressions are validated with simulation and experimental studies. The obtained results will be useful for improving capacitor selection algorithms used in power distribution network design by incorporating the coupling effects into the constraints.
机译：微处理器板包括许多并联的电容器，用于去耦。由于空间限制，它们彼此靠近。当两个具有不同自谐振频率的电容器并联连接时，在它们的自谐振频率之间会引入一个称为反谐振的阻抗峰值。如果电容器彼此靠近放置，则它们的安装回路将磁耦合。这种耦合影响反共振峰值，本研究对此进行了研究。利用电路理论推导了反谐振峰值的表达式，并将其与在Matlab™中获得的精确解进行了比较。在此基础上制定了一般的临界阻尼条件。这些表达式已通过仿真和实验研究验证。通过将耦合效应纳入约束条件，所获得的结果将有助于改进配电网络设计中使用的电容器选择算法。

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