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首页> 外文期刊>Science and Technology of Advanced Materials >Study of spin transport in In_(0.75)Ga_(0.25)As/In_(0.75)Al_(0.25)As narrow wires
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Study of spin transport in In_(0.75)Ga_(0.25)As/In_(0.75)Al_(0.25)As narrow wires

机译：In_（0.75）Ga_（0.25）As / In_（0.75）Al_（0.25）As窄线中自旋输运的研究

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摘要

We systematically studied spin-orbit interaction in narrow wires with different wire widths, where the base material is a normal-type In_(0.75)Ga_(0.25)As/In_(0.75)Al_(0.25)As modulation-doped narrow-gap heterojunction. We used two different methods to make the wires and analyze their spin-dependent transports. As a first method, the wire width was defined by simply mesa-etching the samples on the same substrate. As a second method, we fabricated wire samples with side-gate. The wire width was changed by varying a voltage applied to the side-gate. For the determination of spin-orbit coupling constant, α, we measured magneto-resistance at 1.6 K. In the first method, α remained almost constant in the wires with various widths longer than 0.4 μm. However, in the second method, a increased with decreasing the wire width down to about 1 μm. The increase of α observed in the side-gate structure sample might rather be attributed to the effect of the lateral electric field by the side-gate, which could enhance the effect of the vertical electric field originally existing at the hetero-interface.
机译：我们系统地研究了不同线宽的窄线中的自旋-轨道相互作用，其中基体材料为普通型In_（0.75）Ga_（0.25）As / In_（0.75）Al_（0.25）As调制掺杂的窄间隙异质结。我们使用两种不同的方法制作导线并分析其自旋相关的传输。作为第一种方法，通过简单地在同一基板上台面蚀刻样品来定义线宽。作为第二种方法，我们制造了带有侧门的导线样品。通过改变施加到侧栅的电压来改变线宽。为了确定自旋轨道耦合常数α，我们在1.6 K下测量了磁阻。在第一种方法中，各种宽度大于0.4μm的导线中α几乎保持恒定。然而，在第二种方法中，随着线宽度减小到大约1μm，增大了。在侧栅结构样本中观察到的α的增加可能归因于侧栅对横向电场的影响，这可能会增强最初存在于异质界面的垂直电场的影响。

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