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Self-organized one-axis-oriented PZT films with nano-domain structure

机译:具有纳米域结构的自组织单轴取向PZT膜

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{100} One-axis-oriented PZT films with a thickness of 2 μm were obtained on (111)Pt/TiO_2/SiO_2/(100)Si substrates by metal organic chemical vapor deposition (MOCVD). These were obtained irrespective of the film thickness up to 2 μm and with a Zr/(Zr + Ti) ratio from 0.20 to 0.75. This was found to be due to the higher growth rate of these orientation grains than {110} and {111)} orientation grains. These films had columnar grains 50-100 nm in width. Moreover, they were found to include 90° nano-domains 10-20 nm in width. Dielectric constant, ε_r and the field induced-strain were maximum around a Zr/(Zr + Ti) ratio of 0.5, which was in good agreement with previous reports on sintered bodies with 100 times larger domains. This means that the domain size had any effect on ε_r or field-induced strain.
机译:{100}通过金属有机化学气相沉积(MOCVD)在(111)Pt / TiO_2 / SiO_2 /(100)Si衬底上获得厚度为2μm的单轴取向PZT膜。不论膜厚最大为2μm且Zr /(Zr + Ti)之比为0.20至0.75,都可以获得这些。发现这是由于这些取向晶粒的生长速率高于{110}和{111)}取向晶粒的缘故。这些膜具有宽度为50-100nm的柱状晶粒。此外,发现它们包括宽度为10-20nm的90°纳米域。 Zr /(Zr + Ti)之比约为0.5时,介电常数ε_r和场感应应变最大,这与先前关于具有100倍大畴的烧结体的报道非常吻合。这意味着畴尺寸对ε_r或场致应变有任何影响。

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