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Microstructure and Properties of PZT Films with Different PbO Content—Ionic Mechanism of Built-In Fields Formation

机译:不同PbO含量的PZT薄膜的微观结构和性能-内置场形成的离子机理

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摘要

Experimental studies were conducted on the effects of lead oxide on the microstructure and the ferroelectric properties of lead zirconate-titanate (PZT) films obtained by the method of radio frequency (RF) magnetron sputtering of a ceramic PZT target and PbO2 powder with subsequent heat treatment. It is shown that the change in ferroelectric properties of polycrystalline PZT films is attributable to their heterophase structure with impurities of lead oxide. It is also shown that, even in the original stoichiometric PZT film, under certain conditions (temperature above 580 °C, duration greater than 70 min), impurities of lead oxide may be formed. The presence of a sublayer of lead oxide leads to a denser formation of crystallization centers of the perovskite phase, resulting in a reduction of the grain size as well as the emergence of a charge on the lower interface. The formation of the perovskite structure under high-temperature annealing is accompanied by the diffusion of lead into the surface of the film. Also shown is the effect of the lead ions segregation on the formation of the self-polarized state of thin PZT films.
机译:实验研究了氧化铅对陶瓷PZT靶材和PbO2粉末的射频(RF)磁控溅射方法以及随后的热处理方法获得的锆钛酸铅(PZT)薄膜的组织和铁电性能的影响。 。结果表明,多晶PZT薄膜的铁电性能变化是由于它们的异相结构与氧化铅杂质引起的。还显示,即使在原始的化学计量PZT膜中,在某些条件下(温度高于580°C,持续时间大于70分钟),也可能形成氧化铅杂质。氧化铅子层的存在导致钙钛矿相的结晶中心的致密形成,导致晶粒尺寸减小以及在下部界面上出现电荷。高温退火下钙钛矿结构的形成伴随着铅扩散到薄膜表面。还显示了铅离子离析对薄PZT薄膜自极化态形成的影响。

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