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ZnSe Single Crystals Grown by Vapor Growth Methods and Their Applications

机译：气相生长法生长的ZnSe单晶及其应用

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ZnSe-based white LED (light emitting diode) can be fabricated by homoepitaxial growth on ZnSe conductive substrate. This LED emits white light by mixing the blue-green emission from the ZnCdSe active layer and the deep level yellow emission from the ZnSe substrate excited by the active layer emission. Large conductive ZnSe substrates with high quality are required for this device application. The vapor growth techniques, such as PVT (physical vapor transport) method and CVT (chemical vapor transport) method, were applied to the growth of the ZnSe single crystals. The most important problem to be solved in the PVT growth of the ZnSe single crystal is voids formation during the crystal growth. The voids formation was eliminated by the semi-open free-growth method in which the growing crystal could be kept at the local minimum temperature position during the crystal growth. ZnSe single crystals of 45 mm diameter and 35 mm length with dislocation density of about 5 x 103 cm"2 could be grown by this PVT method. For CVT method, on the other hand, the suppression of the influence of the convection during the crystal growth is the problem. This subject was solved by the rotational CVT method. ZnSe-based white LED could be operated the low applied voltage of 2.75 V and demonstrated that the optical output power was 4.25 mW at forward current of 20 mA. The life time of the LED showed longer than 10,000 hours at room temperature. This paper reviews mainly ZnSe single crystal growth techniques and shows some application results. 【keyworks】 ZnSe;crystal growth;PVT;CVT;white LED
机译：可以通过在ZnSe导电衬底上进行同质外延生长来制造ZnSe基白色LED（发光二极管）。该LED通过混合来自ZnCdSe活性层的蓝绿色发射光和来自被有源层发射激发的ZnSe衬底的深能级黄色发射而发射白光。此设备应用需要高质量的大型导电ZnSe衬底。 ZnSe单晶的生长采用了诸如PVT（物理气相传输）法和CVT（化学气相传输）法之类的气相生长技术。 ZnSe单晶的PVT生长中要解决的最重要问题是晶体生长过程中形成空隙。通过半开放自由生长法消除了空隙的形成，该方法可以将生长的晶体在晶体生长期间保持在局部最低温度位置。通过PVT法可以生长直径为45 mm，长度为35 mm，位错密度约为5 x 103 cm“ 2的ZnSe单晶。另一方面，对于CVT方法，可以抑制晶体对流的影响通过旋转CVT方法解决了这个问题，基于ZnSe的白光LED可以在2.75 V的低施加电压下工作，并证明在20 mA的正向电流下光输出功率为4.25 mW。 【主要工作】ZnSe；晶体生长； PVT； CVT；白光LED；主要研究ZnSe单晶的生长技术，并显示一些应用结果。

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  • 来源
    《SEI Technical Review》 |2011年第72期|p.25-33|共9页
  • 作者

    Yasuo NAMIKAWA;

  • 作者单位

    Senior Specialist Doctor of Engineering General ManagerTechnologies Department Power Device Development Division He is engaged in the research and development of crys-tal growth of compound semiconductors and oxides and the development of power devices;

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