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首页> 外文期刊>Semiconductor photonics and technology >Layer Combination Effect on Band Gap Shift of InGaAsP/InP MQWs by Impurity―free Vacancy Disordering
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Layer Combination Effect on Band Gap Shift of InGaAsP/InP MQWs by Impurity―free Vacancy Disordering

机译：无杂质空位无序对InGaAsP / InP MQW的带隙位移的层组合效应

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摘要

InGaAsP/InP multiple quantum wells with quantum well intermixing have been prepared by impurity―free vacancy disordering. The luminescent characteristics were investigated using photoluminescence and photo reflectance, from which the band gap blue shift was observed. Si_3N_4, SiO_2 and SOG were used for the dielectric layer to enhance intermixing from the outdiffusion of group Ⅲ atoms. All samples were annealed by rapid thermal annealing. The results indicate that the band gap blue shift varies with the dielectric layers and the annealing temperature. The SiO_2 capping with an InGaAs cladding layer was successfully used to induce larger band tuning effect in the InGaAsP/InP MQWs than the Si_3 N_4 capping with an InGaAs cladding layer. On the other hand, samples with the Si_3 N_4―InP cap layer combination also show larger energy shifts than that with SiO_2―InP cap layer combination.
机译：通过无杂质空位无序制备了具有量子阱混合的InGaAsP / InP多量子阱。使用光致发光和光反射率研究发光特性，从中观察到带隙蓝移。 Si_3N_4，SiO_2和SOG被用作介电层，以增强Ⅲ族原子向外扩散的混合作用。通过快速热退火对所有样品进行退火。结果表明，带隙蓝移随介电层和退火温度的变化而变化。与使用InGaAs覆盖层的Si_3 N_4覆盖相比，成功地使用InGaAs覆盖层的SiO_2覆盖在InGaAsP / InP MQWs中引起更大的能带调谐效果。另一方面，Si_3 N_4―InP盖层组合的样品也显示出比SiO_2―InP盖层组合样品更大的能量位移。

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