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首页> 外文期刊>Semiconductor science and technology >Influence of thermal treatment and electron-blocking layers on the optical properties of InGaP/InGaAlP MQW structures for red RCLEDs
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Influence of thermal treatment and electron-blocking layers on the optical properties of InGaP/InGaAlP MQW structures for red RCLEDs

机译：热处理和电子阻挡层对红色RCLED的InGaP / InGaAlP MQW结构的光学性能的影响

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摘要

We report the effects of rapid thermal annealing (RTA) and electron-blocking layers (EBL) on the optical properties of InGaP/InGaAlP multiple quantum well (MQW) structures for red resonant-cavity light-emitting diodes. The photoluminescence (PL) intensity is strongly dependent on the RTA temperature and time due to the annealing of non-radiative defect centers in QWs. The use of various EBL structures, such as p-InGaA1P, InA1P and p-InA1P, at the top and the top/bottom of MQWs increases the PL and electroluminescence (EL) intensities of InGaP/InGaAlP MQW structures by preventing electron overflow from the active region. For the as-grown sample with two EBLs of p-InAlP at the top/bottom of QWs, the PL intensity is approximately 14 times higher than that of the sample without an EBL. The additional RTA process at 720 ℃ for 240 s improves the PL intensity (i.e. 46 times) dramatically. For the device structure with two EBLs of p-InAlP on the annealed wafer, the EL intensity is improved by 12 times at 20 mA compared to the no-EBL structure.
机译：我们报告了快速热退火（RTA）和电子阻挡层（EBL）对红色谐振腔发光二极管InGaP / InGaAlP多量子阱（MQW）结构的光学性能的影响。由于QW中非辐射缺陷中心的退火，光致发光（PL）强度很大程度上取决于RTA温度和时间。在MQW的顶部和顶部/底部使用各种EBL结构，例如p-InGaA1P，InA1P和p-InA1P，可通过防止电子从电极上溢而增加InGaP / InGaAlP MQW结构的PL和电致发光（EL）强度。活动区域。对于在QW顶部/底部具有两个p-InAlP的EBL的成长期样品，PL强度比没有EBL的样品高约14倍。附加的RTA工艺在720℃下持续240 s，可显着提高PL强度（即46倍）。对于在退火晶片上具有两个p-InAlP EBL的器件结构，与无EBL结构相比，在20 mA下EL强度提高了12倍。

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  • 来源
    《Semiconductor science and technology》 |2010年第8期|P.14.1-14.5|共5页
  • 作者

    C Y Park; K W Park; S J Jang; J S Yu; Y T Lee;

  • 作者单位

    Department of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea;

    rnDepartment of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea;

    rnDepartment of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea;

    rnDepartment of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong,Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Republic of Korea;

    rnDepartment of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea School of Photon Science and Technology, Gwangju Institute of Science and Technology,1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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