Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN

V Rajagopal Reddy; Sang-Ho Kim; June O Song; Tae-Yeon Seong

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Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN

机译：与p型GaN的低电阻和热稳定Pd / Re欧姆接触

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We have investigated a low-resistance thermally stable Pd/Re ohmic contact on moderately doped p-GaN:Mg (1.1 x 10~(17) cm~(-3)). It is shown that the Ⅰ―Ⅴ characteristic of the as-deposited sample is improved upon annealing at 550℃ for 1 min under N_2 ambient. However, annealing the sample at 650℃ results in the degradation of the Ⅰ―Ⅴ behaviour. Specific contact resistance as low as 8.7 x 10~(-4) Ω cm~2 is obtained from the Pd(20 nm)/Re(25 nm) contact annealed at 550 ℃. It is also shown that the contact exhibits thermal stability during annealing at 550℃. Auger electron microscopy and glancing angle x-ray diffraction studies are carried out to characterize interfacial reactions between the Pd/Re contacts and the GaN.

机译：我们研究了在中等掺杂的p-GaN：Mg（1.1 x 10〜（17）cm〜（-3））上的低电阻热稳定Pd / Re欧姆接触。结果表明，在N_2气氛下550℃退火1min可以改善样品的Ⅰ〜Ⅴ特性。然而，在650℃下对样品进行退火会导致Ⅰ〜Ⅴ行为的降低。由550℃退火的Pd（20 nm）/ Re（25 nm）接触得到的比接触电阻低至8.7 x 10〜（-4）Ωcm〜2。还表明该接触在550℃退火期间表现出热稳定性。进行了俄歇电子显微镜和掠射角X射线衍射研究，以表征Pd / Re触点与GaN之间的界面反应。

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来源
《Semiconductor science and technology》 |2003年第6期|p.541-544|共4页
作者
V Rajagopal Reddy; Sang-Ho Kim; June O Song; Tae-Yeon Seong;
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作者单位

Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), 1 Oryong-dong, Puk-gu, Kwangju 500-712, Korea;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN

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