• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Sensors and Actuators >Preparation of porous InAlGaN/Si(111) by photoelectrochemical etching for high performance hydrogen gas sensors at room temperature
【24h】

Preparation of porous InAlGaN/Si(111) by photoelectrochemical etching for high performance hydrogen gas sensors at room temperature

机译：在室温下通过光电化学蚀刻制备高性能氢气传感器的多孔InAlGaN / Si（111）

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper describes the development of gas sensors based on platinum (Pt) Schottky contact on porous InAlGaN for hydrogen gas sensing. Porous InAlGaN samples were successfully fabricated by photoelectrochemical etching for different etching durations. Pore density and surface roughness increased with etching duration. Pt Schottky contacts which acted as the catalytic layer, were then deposited on all porous InAlGaN samples and a non-porous InAlGaN sample for comparative study. The effects of porous structure on the performance of the hydrogen gas sensors were investigated. The porous InAlGaN gas sensors exhibited better performance upon introduction of 0.1% H_2 in N_2 gas relative to the non-porous InAlGaN gas sensor. The sensing response of the porous InAlGaN gas sensors increased as the pore density and surface roughness increased. The sensing response of the optimum gas sensor (etched for 10min) was about 6.9 higher than that of the non-porous InAlGaN gas sensor, with response and recovery times of 13.8 s and 88.4 s, respectively, at room temperature. Furthermore, the current response increased gradually with hydrogen flow rate for this sample.
机译：本文介绍了基于多孔InAlGaN上铂（Pt）肖特基接触的气体传感器的开发，用于氢气传感。通过光电化学刻蚀成功地在不同的刻蚀持续时间内制备了多孔InAlGaN样品。孔密度和表面粗糙度随蚀刻时间而增加。然后，将充当催化层的Pt肖特基接触沉积在所有多孔InAlGaN样品和无孔InAlGaN样品上，以进行比较研究。研究了多孔结构对氢气传感器性能的影响。相对于无孔InAlGaN气体传感器，在N_2气体中引入0.1％H_2时，多孔InAlGaN气体传感器表现出更好的性能。随孔密度和表面粗糙度的增加，多孔InAlGaN气体传感器的传感响应也随之增加。最佳气体传感器（蚀刻10分钟）的感测响应比无孔InAlGaN气体传感器的感测响应高约6.9，在室温下的响应和恢复时间分别为13.8 s和88.4 s。此外，该样品的电流响应随着氢气流速的增加而逐渐增加。

著录项

  • 来源
    《Sensors and Actuators》 |2015年第7期|276-284|共9页
  • 作者

    R. Radzali; Z. Hassan; N.Zainal; F.K. Yam;

  • 作者单位

    Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia,Faculty of Electrical Engineering, Universiti Teknologi MARA, Jalan Permatang Pauh, 13500 Permatang Pauh, Pulau Pinang, Malaysia;

    Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;

    Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;

    Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Porous InAlGaN; Photoelectrochemical etching; Gas sensor; Hydrogen (H_2);

    机译：多孔InAlGaN;光电化学蚀刻;气体传感器氢（H_2）;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号