Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

Filippov V.I.; Vasiliev A.A.; Moritz W.; Szeponik J.

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Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

机译：基于$ hboxPt / LaF_3 $ Interface的MIS结构的室温氢敏感性

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An$hboxLaF_3$layer was shown to improve the characteristics of field-effect gas sensors for room-temperature hydrogen monitoring. The$hboxPt/LaF_3$interface leads to a Nernst-type response and a detection limit of 10-ppm hydrogen in atmospheric air. The response time was shown to be about 110 s and was independent of hydrogen concentration. A method for the stabilization of a long-term behavior of the sensor was successfully demonstrated. The mechanism of the sensor's response to hydrogen was shown to be different from that of the metal/insulator/semiconductor (MIS)-type sensors.

机译：展示了一个hboxLaF_3 $层可以改善用于室温氢气监测的场效应气体传感器的特性。 $ hboxPt / LaF_3 $界面导致能斯特型响应和大气中氢的检出限为10 ppm。响应时间显示为约110 s，与氢浓度无关。成功证明了一种稳定传感器长期性能的方法。结果表明，传感器对氢的响应机制与金属/绝缘体/半导体（MIS）型传感器不同。

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《IEEE sensors journal》 |2006年第5期|p.1250-1255|共6页
作者
Filippov V.I.; Vasiliev A.A.; Moritz W.; Szeponik J.;
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正文语种 eng
中图分类电工技术;计量学;
关键词
Hydrogen sensor; metal/insulator/semiconductor (MIS) structure; room-temperature measurement; solid electrolyte;

机译：氢传感器;金属/绝缘体/半导体（MIS）结构;室温测量;固体电解质;

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1. Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface [J] . Filippov V.I., Vasiliev A.A., Moritz W., IEEE sensors journal . 2006,第期

机译：基于$ hboxPt / LaF_3 $ Interface的MIS结构的室温氢敏感性
2. Modified Mis-structure Based On Nanoporous Silicon With Enhanced Sensitivity To The Hydrogen Containing Gases [J] . T. Gorbanyuk, A. Evtukh, V. Litovchenko, Physica status solidi . 2008,第12期

机译：基于纳米多孔硅的修饰错构结构，对含氢气体具有更高的敏感性
3. A high-sensitivity room-temperature hydrogen gas sensor based on oblique and vertical ZnO nanorod arrays [J] . J.J. Hassan, M.A. Mahdi, C.W. Chin, Sensors and Actuators . 2013,第JANa期

机译：基于倾斜和垂直ZnO纳米棒阵列的高灵敏度室温氢气传感器
4. Electrical properties of MIS-structures and Schottky barriers of Si/GaAs (001) interface [C] . Aksenov Maxim S., Preobrazhensky Valery V., Putyato Mikhail A., 2011 12th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices . 2011

机译：Si / GaAs（001）界面的MIS结构和肖特基势垒的电学性质
5. The gas -liquid interface of imidazolium-based room-temperature ionic liquids: Sum frequency generation and surface tension studies [D] . Santos, Cherry S. 2008

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6. Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects [O] . Shula Chen, Yuqing Huang, Dennis Visser, -1

机译：基于几乎没有缺陷的半导体纳米盘纳米柱结构的室温极化自旋光子界面
7. Measurement of Low Concentrations of Hydrogen in Oxygen By Using Sensors Based on MIS-structures [O] . A V Litvinov, M O Etrekova 2018

机译：基于MIS-结构的传感器测量氧气低浓度的氢气

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

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