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Role of Native Defect in Near Room Temperature CH4 Sensing Using Nanostructured V2O5

机译:使用纳米结构V2O5在接近室温CH4感测的内天然缺陷的作用

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摘要

Native defects are highly prevalent in vanadium pentoxide (V2O5) as it can easily get converted into reduced oxides. The role of defects in gas sensing properties of V2O5 nanostructures, however, are not well understood. In the present report, effect of native defects on near room temperature sensing is reported for the first time. Hydrothermally grown V2O5 nanoparticles with substantial sensor response to CH4 close to room temperature at 50 degrees C is presented. Fast response and recovery times of 43 s and 75 s, respectively, for 500 ppm CH4 gas at optimum operating temperature of 150 degrees C were observed. Temperature dependent photoluminescence studies were carried out to understand the role of native defects and their emission behavior leading to carrier saturation in realizing optimum operating temperature.
机译:本地缺陷在五氧化二钒(V2O5)中具有高度普遍的缺陷,因为它可以容易地转化为降低的氧化物。然而,缺陷在V2O5纳米结构的气体传感性质中的作用尚不清楚。在本报告中,首次报告了本地缺陷对近室温感测的影响。呈现了在50℃下接近室温的具有大量传感器响应的水热量生长的V2O5纳米颗粒。观察到快速响应和43秒和75秒的恢复时间,在最佳工作温度下为150℃的最佳工作温度为500ppm CH4气体。进行温度依赖性光致发光研究,以了解天然缺陷的作用及其排放行为,导致载体饱和在实现最佳工作温度方面。

著录项

  • 来源
    《IEEE sensors journal》 |2020年第9期|4555-4561|共7页
  • 作者单位

    Indira Gandhi Ctr Atom Res Homi Bhabha Natl Inst Kalpakkam 603102 Tamil Nadu India;

    Indira Gandhi Ctr Atom Res Homi Bhabha Natl Inst Kalpakkam 603102 Tamil Nadu India|Indira Gandhi Ctr Atom Res Surface & Nanosci Div Mat Sci Grp Kalpakkam 603102 Tamil Nadu India;

    Indira Gandhi Ctr Atom Res Homi Bhabha Natl Inst Kalpakkam 603102 Tamil Nadu India|Indira Gandhi Ctr Atom Res Surface & Nanosci Div Mat Sci Grp Kalpakkam 603102 Tamil Nadu India;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Vanadium pentoxide; methane sensing; native defects; photoluminescence;

    机译:钒五氧化钒;甲烷感应;本地缺陷;光致发光;

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