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首页> 外文期刊>IEEE sensors journal >Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging
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Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging

机译：PBS量子点光电二极管对NIR成像的硅集成

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摘要

Colloidal quantum dots based on lead sulfide (PbS) are very attractive materials for the realization of novel image sensors. They offer low cost synthesis, compatibility with a variety of substrates and processing on large area. The tunable band gap enables selective light detection from the visible wavelengths up to the short-wave-infrared (SWIR). This work describes the roadmap towards the integration of quantum dot photodiodes (QDPD) on top of a Si based CMOS read-out circuit. Photodiodes using an n-p junction architecture are fabricated on Si substrates, showing a dark current of 30 nA/cm(2) at -1 V reverse bias, EQE above 20% and specific detectivity above 10(12) cm Hz(1/2) W-1 at the wavelength of 940 nm. Efficiency is improved by reducing absorption in the top contact through optical design. Furthermore, photolithographic patterning of the thin-film stack is introduced for the first time, showing the feasibility of pixel pitches down to 40 mu m, opening the way towards high resolution monolithic infrared imagers and the incorporation of infrared and visible sensitive pixels side by side.
机译：基于硫化铅（PBS）的胶体量子点是实现新型图像传感器的非常有吸引力的材料。它们提供低成本合成，与各种基板的兼容性和大面积的加工。可调谐带隙使得能够从可见波长的选择性光检测到短波红外（SWIR）。这项工作描述了朝向Si基CMOS读出电路顶部集成的朝向量子点光电二极管（QDPD）的路线图。使用NP结架构的光电二极管在Si底物上制造，显示在-1V逆偏压的30na / cm（2）的暗电流，EQE高于20％，特定探测器10（12）cm Hz（1/2） W-1在940nm的波长下。通过光学设计减少顶部接触中的吸收来改善效率。此外，首次引入薄膜堆叠的光刻图案化，显示了像素间距下降到40μm的可行性，以高分辨率单片红外成像器开启朝向高分辨率单片红外成像和并排掺入红外和可见敏感像素的方式。

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