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Toward low-cost large-area CIGS thin film III: Effect of Se concentration on crystal growth and defect formation of sequentially electrodeposited CIGS thin films

机译:面向低成本大面积CIGS薄膜的研究III:硒浓度对顺序电沉积CIGS薄膜的晶体生长和缺陷形成的影响

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摘要

Nowadays, large area CuInxGa1-xSe2 (CIGS) thin film solar cells still face difficulties and challenges of the uniformity of composition and structure. This study illustrates how Se concentration affects the crystal growth and the defect formation of CIGS from low cost electrodeposited stacked Cu/In/Cu/Ga/Cu layers selenized in the rapid thermal process. Various crystal growth modes were observed in the film selenized with different Se concentrations. It was found that the crystal growth was strongly dependent on the Se concentration in the early stage of selenization between 250 and 350 degrees C, which can lead to variations of film composition and structure including a phase separation of CuGaSe2 from CuInSe2 and formation of defect holes in a CIGS film at a higher selenization temperature. (C) 2016 Elsevier Ltd. All rights reserved.
机译:如今,大面积CuInxGa1-xSe2(CIGS)薄膜太阳能电池仍面临组成和结构均匀性的难题。这项研究说明了硒浓度如何影响在快速热处理过程中硒化的低成本电沉积堆叠式Cu / In / Cu / Ga / Cu层对晶体生长和CIGS缺陷形成的影响。在硒浓度不同的硒化膜中观察到各种晶体生长模式。发现在硒化的早期阶段,在250至350摄氏度之间,晶体的生长强烈依赖于硒的浓度,这可能导致膜组成和结构发生变化,包括CuGaSe2与CuInSe2的相分离和缺陷孔的形成。在较高的硒化温度下在CIGS薄膜中沉积。 (C)2016 Elsevier Ltd.保留所有权利。

著录项

  • 来源
    《Solar Energy》 |2016年第7期|547-557|共11页
  • 作者单位

    Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan;

    Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan;

    Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan;

    Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan;

    Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan;

    Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CIGS; Solar; Electrodeposition; Selenization;

    机译:CIGS;太阳能;电沉积;硒化;

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