We applied the “selenization of stack element layers” method to the preparation of CuIn1-xGaxSe2 (CIGS) films.The selenium vapor concentration was precisely controlled to optimize the annealing process using a homemade bilayer tubular selenization facility, and its effect on the photoelectric characteristics of the films was studied.Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were used to analyze the composition distribution in the cross-section and to obtain phase information, respectively.The output performance of the CIGS device was also measured under AM1.5 1000 W·m-2 illumination.The results indicated that the molybdenum back contact layer was seriously degraded by the saturated selenium vapor during annealing.Annealing with a low concentration of selenium vapor led to bad performance because of segregation and defects in the film.The CIGS film was homogeneous after annealing in a selenium-free inert atmosphere and a conversion efficiency of 8.5％ was obtained.%采用"预制层硒化法"制备Culn1-xGaxSe2(CIGS)薄膜,基于自主设计的"双层管式硒化装置",通过控制硒蒸气浓度优化退火工艺,研究硒蒸气浓度对薄膜光电性能的影响,利用俄歇电子能谱(AES)和X射线衍射分析(XRD)等手段对不同硒浓度氛围下生成的CIGS薄膜的成分和物相进行表征,并在AM1.5、1000 W·m-2的标准光照条件下比较相应CIGS电池器件的输出性能,实验结果表明:饱和硒蒸气下退火得到的样品,基底钼膜遭到严重腐蚀破坏,失去背电极功能;在低浓度硒气氛下退火不能有效消除CIGS薄膜的偏析和缺陷,以致光电转换效率低;而在无硒惰性氛围下退火的样品,生成了物相均一化的CIGS薄膜,由此制备的CIGS电池取得了8.5%的转换效率.
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